WO2013016305A3 - Component analysis systems and methods - Google Patents

Component analysis systems and methods Download PDF

Info

Publication number
WO2013016305A3
WO2013016305A3 PCT/US2012/047897 US2012047897W WO2013016305A3 WO 2013016305 A3 WO2013016305 A3 WO 2013016305A3 US 2012047897 W US2012047897 W US 2012047897W WO 2013016305 A3 WO2013016305 A3 WO 2013016305A3
Authority
WO
WIPO (PCT)
Prior art keywords
component
metal layer
vias
signal transition
methods
Prior art date
Application number
PCT/US2012/047897
Other languages
French (fr)
Other versions
WO2013016305A2 (en
Inventor
Wojciech Jakub POPPE
Ilyas Elkin
Puneet Gupta
Original Assignee
Nvidia Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/528,725 external-priority patent/US9425772B2/en
Application filed by Nvidia Corporation filed Critical Nvidia Corporation
Priority to DE112012003071.0T priority Critical patent/DE112012003071T5/en
Priority to CN201280032957.3A priority patent/CN103650345A/en
Publication of WO2013016305A2 publication Critical patent/WO2013016305A2/en
Publication of WO2013016305A3 publication Critical patent/WO2013016305A3/en

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/027Generators characterised by the type of circuit or by the means used for producing pulses by the use of logic circuits, with internal or external positive feedback
    • H03K3/03Astable circuits
    • H03K3/0315Ring oscillators
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/317Testing of digital circuits
    • G01R31/31725Timing aspects, e.g. clock distribution, skew, propagation delay
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/34Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/282Testing of electronic circuits specially adapted for particular applications not provided for elsewhere
    • G01R31/2831Testing of materials or semi-finished products, e.g. semiconductor wafers or substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

Component characteristics analysis systems and methods are described. In one embodiment, a ring oscillator comprises: at least one inversion stage operable to cause a signal transition; a target component that has an increased comparative impact or influence on a signal transition propagation in the ring oscillator; and an output component for outputting an indication of the impact the target component has on the signal transition. The target component can include a plurality of vias from one metal layer to another metal layer. The plurality of vias from one metal layer to another metal layer can be configured in a cell. The vias can correspond to a via layer. In one exemplary implementation, the output is coupled to an analysis component. The analysis component can include correlation of the via resistance into a wafer variations and generate a wafer map. The analysis component can include correlation of the via resistance into a wafer.
PCT/US2012/047897 2011-07-22 2012-07-23 Component analysis systems and methods WO2013016305A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
DE112012003071.0T DE112012003071T5 (en) 2011-07-22 2012-07-23 Component analysis systems and methods
CN201280032957.3A CN103650345A (en) 2011-07-22 2012-07-23 Component analysis systems and methods

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
US201161511021P 2011-07-22 2011-07-22
US61/511,021 2011-07-22
US201161512362P 2011-07-27 2011-07-27
US61/512,362 2011-07-27
US201161513508P 2011-07-29 2011-07-29
US61/513,508 2011-07-29
US13/528,725 US9425772B2 (en) 2011-07-27 2012-06-20 Coupling resistance and capacitance analysis systems and methods
US13/528,725 2012-06-20

Publications (2)

Publication Number Publication Date
WO2013016305A2 WO2013016305A2 (en) 2013-01-31
WO2013016305A3 true WO2013016305A3 (en) 2013-03-21

Family

ID=47555373

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2012/047897 WO2013016305A2 (en) 2011-07-22 2012-07-23 Component analysis systems and methods

Country Status (5)

Country Link
US (1) US9496853B2 (en)
CN (1) CN103650345A (en)
DE (1) DE112012003071T5 (en)
TW (2) TWI472781B (en)
WO (1) WO2013016305A2 (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103476777B (en) 2011-01-31 2015-05-27 诺瓦提斯公司 Novel heterocyclic derivatives
US8816715B2 (en) * 2011-05-12 2014-08-26 Nanya Technology Corp. MOS test structure, method for forming MOS test structure and method for performing wafer acceptance test
US9425772B2 (en) 2011-07-27 2016-08-23 Nvidia Corporation Coupling resistance and capacitance analysis systems and methods
WO2013061305A1 (en) 2011-10-28 2013-05-02 Novartis Ag Novel purine derivatives and their use in the treatment of disease
US8952705B2 (en) 2011-11-01 2015-02-10 Nvidia Corporation System and method for examining asymetric operations
US9448125B2 (en) 2011-11-01 2016-09-20 Nvidia Corporation Determining on-chip voltage and temperature
TWI491894B (en) * 2013-12-23 2015-07-11 Azurewave Technologies Inc A inter-stage test structure for a wireless communication apparatus
US9485671B2 (en) 2014-02-27 2016-11-01 Azurewave Technologies, Inc. Inter-stage test structure for wireless communication apparatus
US10156605B2 (en) * 2014-08-29 2018-12-18 Semitronix Corporation Addressable ring oscillator test chip
US10935962B2 (en) * 2015-11-30 2021-03-02 National Cheng Kung University System and method for identifying root causes of yield loss
KR101772808B1 (en) * 2016-03-18 2017-08-30 연세대학교 산학협력단 Circuit and method for test and analysis through-silicon-via
US10515167B2 (en) 2016-08-05 2019-12-24 Synopsys, Inc. Cell-aware defect characterization and waveform analysis using multiple strobe points
CN115130421A (en) 2021-05-20 2022-09-30 台湾积体电路制造股份有限公司 Integrated circuit device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010035660A (en) * 1999-10-01 2001-05-07 김영환 A method of measuring delay time due to interconnections
US20030001185A1 (en) * 2001-06-29 2003-01-02 Bernhard Sell Circuit configuration and method for determining a time constant of a storage capacitor of a memory cell in a semiconductor memory
US20060028241A1 (en) * 2004-07-27 2006-02-09 Easic Corporation Structured integrated circuit device
US7180794B2 (en) * 2001-11-30 2007-02-20 Sharp Kabushiki Kaisha Oscillating circuit, booster circuit, nonvolatile memory device, and semiconductor device
US20080094053A1 (en) * 2006-10-24 2008-04-24 Samsung Electronics Co., Ltd. Test circuits having ring oscillators and test methods thereof

Family Cites Families (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0334983A1 (en) 1988-03-31 1989-10-04 Deutsche ITT Industries GmbH Integrated CMOS/NMOS circuit
US5553276A (en) 1993-06-30 1996-09-03 International Business Machines Corporation Self-time processor with dynamic clock generator having plurality of tracking elements for outputting sequencing signals to functional units
JPH08294229A (en) 1995-04-20 1996-11-05 Nec Corp Semiconductor integrated circuit device
JP3708168B2 (en) 1995-06-13 2005-10-19 富士通株式会社 Delay device
JP3102398B2 (en) 1997-12-17 2000-10-23 日本電気株式会社 Timing signal generation circuit
KR20000065711A (en) 1999-04-08 2000-11-15 윤종용 Internal clock signal generating circuit having pulse generator
JP4103280B2 (en) 1999-12-24 2008-06-18 株式会社デンソー Mechanical quantity sensor device
GB2377836B (en) * 2000-05-11 2004-10-27 Multigig Ltd Electronic pulse generator and oscillator
US6535013B2 (en) 2000-12-28 2003-03-18 Intel Corporation Parameter variation probing technique
US6535071B2 (en) * 2001-05-17 2003-03-18 Micron Technology, Inc. CMOS voltage controlled phase shift oscillator
US6724225B2 (en) 2001-06-07 2004-04-20 Ibm Corporation Logic circuit for true and complement signal generator
US6853259B2 (en) 2001-08-15 2005-02-08 Gallitzin Allegheny Llc Ring oscillator dynamic adjustments for auto calibration
US6882172B1 (en) 2002-04-16 2005-04-19 Transmeta Corporation System and method for measuring transistor leakage current with a ring oscillator
US6854100B1 (en) 2002-08-27 2005-02-08 Taiwan Semiconductor Manufacturing Company Methodology to characterize metal sheet resistance of copper damascene process
US6801096B1 (en) * 2003-01-22 2004-10-05 Advanced Micro Devices, Inc. Ring oscillator with embedded scatterometry grate array
DE10303673A1 (en) 2003-01-24 2004-08-12 IHP GmbH - Innovations for High Performance Microelectronics/Institut für innovative Mikroelektronik Asynchronous envelope for a globally asynchronous, locally synchronous (GALS) circuit
TWI234834B (en) * 2003-03-31 2005-06-21 Macronix Int Co Ltd Inkless wafer test method
US7064620B1 (en) * 2003-05-09 2006-06-20 Altera Corporation Sequential VCO phase output enabling circuit
US20050007154A1 (en) 2003-07-07 2005-01-13 Patella Benjamin J. System and method for evaluating the speed of a circuit
US7069525B2 (en) 2003-07-18 2006-06-27 International Business Machines Corporation Method and apparatus for determining characteristics of MOS devices
JP4683833B2 (en) 2003-10-31 2011-05-18 株式会社半導体エネルギー研究所 Functional circuit and design method thereof
KR100549621B1 (en) 2003-11-25 2006-02-03 주식회사 하이닉스반도체 Oscillator for self refresh
US7282975B2 (en) 2003-12-31 2007-10-16 Intel Corporation Apparatus and method to control self-timed and synchronous systems
DE102004001668B4 (en) 2004-01-12 2007-09-13 Infineon Technologies Ag Electronic circuit with a circuit arrangement for determining and evaluating the operating temperature
US7151417B1 (en) 2004-06-16 2006-12-19 Transmeta Corporation System and method for characterizing a potential distribution
US7085658B2 (en) * 2004-10-20 2006-08-01 International Business Machines Corporation Method and apparatus for rapid inline measurement of parameter spreads and defects in integrated circuit chips
US20060178857A1 (en) 2005-02-10 2006-08-10 Barajas Leandro G Quasi-redundant smart sensing topology
KR100657171B1 (en) 2005-04-29 2006-12-20 삼성전자주식회사 Refresh control circuit and method of controlling refresh
US7365611B2 (en) * 2005-06-01 2008-04-29 Semiconductor Energy Laboratory Co., Ltd. Element substrate, test method for element substrate, and manufacturing method for semiconductor device
US7489204B2 (en) * 2005-06-30 2009-02-10 International Business Machines Corporation Method and structure for chip-level testing of wire delay independent of silicon delay
US7550998B2 (en) 2005-10-26 2009-06-23 Motorola, Inc. Inverter circuit having a feedback switch and methods corresponding thereto
US7592876B2 (en) 2005-12-08 2009-09-22 Intel Corporation Leakage oscillator based aging monitor
US7332937B2 (en) 2005-12-28 2008-02-19 Intel Corporation Dynamic logic with adaptive keeper
US7449966B2 (en) 2006-05-09 2008-11-11 Intel Corporation Method and an apparatus to sense supply voltage
WO2007141870A1 (en) 2006-06-09 2007-12-13 Fujitsu Limited Ring oscillator for temperature sensor, temperature sensor circuit and semiconductor device provided with such temperature sensor circuit
JP4765858B2 (en) 2006-09-15 2011-09-07 三菱電機株式会社 Temperature detection device
US8041518B2 (en) * 2007-05-08 2011-10-18 Globalfoundries Inc. Determining die test protocols based on process health
US7795927B2 (en) 2007-08-17 2010-09-14 Raytheon Company Digital circuits with adaptive resistance to single event upset
US7760033B2 (en) 2007-12-31 2010-07-20 Intel Corporation Ring oscillators for NMOS and PMOS source to drain leakage and gate leakage
US7642864B2 (en) 2008-01-29 2010-01-05 International Business Machines Corporation Circuits and design structures for monitoring NBTI (negative bias temperature instability) effect and/or PBTI (positive bias temperature instability) effect
US8378754B2 (en) * 2008-02-21 2013-02-19 Advantest Corporation Ring oscillator
US7908109B2 (en) * 2008-07-08 2011-03-15 Advanced Micro Devices, Inc. Identifying manufacturing disturbances using preliminary electrical test data
US7868706B2 (en) 2008-10-23 2011-01-11 Advanced Micro Devices, Inc. Oscillator device and methods thereof
KR101593603B1 (en) 2009-01-29 2016-02-15 삼성전자주식회사 Temperature detection circuit of semiconductor device
US8247906B2 (en) * 2009-07-06 2012-08-21 Taiwan Semiconductor Manufacturing Company, Ltd. Supplying power to integrated circuits using a grid matrix formed of through-silicon vias
US8330478B2 (en) 2009-11-03 2012-12-11 Arm Limited Operating parameter monitoring circuit and method
TWI439710B (en) * 2009-11-18 2014-06-01 Univ Nat Sun Yat Sen Testing device for a passive component embedded in sip
JP5185304B2 (en) 2010-02-10 2013-04-17 株式会社東芝 Semiconductor integrated circuit
CN102098028A (en) * 2010-10-14 2011-06-15 中国科学院上海微系统与信息技术研究所 Complementary metal-oxide-semiconductor (CMOS) ring oscillator based on mixed crystal orientation silicon on insulator (SOI) technology and manufacturing method thereof
US9425772B2 (en) * 2011-07-27 2016-08-23 Nvidia Corporation Coupling resistance and capacitance analysis systems and methods
US9448125B2 (en) 2011-11-01 2016-09-20 Nvidia Corporation Determining on-chip voltage and temperature
US20130106524A1 (en) 2011-11-01 2013-05-02 Nvidia Corporation System and method for examining leakage impacts
US8952705B2 (en) 2011-11-01 2015-02-10 Nvidia Corporation System and method for examining asymetric operations

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010035660A (en) * 1999-10-01 2001-05-07 김영환 A method of measuring delay time due to interconnections
US20030001185A1 (en) * 2001-06-29 2003-01-02 Bernhard Sell Circuit configuration and method for determining a time constant of a storage capacitor of a memory cell in a semiconductor memory
US7180794B2 (en) * 2001-11-30 2007-02-20 Sharp Kabushiki Kaisha Oscillating circuit, booster circuit, nonvolatile memory device, and semiconductor device
US20060028241A1 (en) * 2004-07-27 2006-02-09 Easic Corporation Structured integrated circuit device
US20080094053A1 (en) * 2006-10-24 2008-04-24 Samsung Electronics Co., Ltd. Test circuits having ring oscillators and test methods thereof

Also Published As

Publication number Publication date
US9496853B2 (en) 2016-11-15
WO2013016305A2 (en) 2013-01-31
DE112012003071T5 (en) 2014-04-10
CN103650345A (en) 2014-03-19
TWI592674B (en) 2017-07-21
TW201323896A (en) 2013-06-16
TWI472781B (en) 2015-02-11
US20130021107A1 (en) 2013-01-24
TW201323900A (en) 2013-06-16

Similar Documents

Publication Publication Date Title
WO2013016305A3 (en) Component analysis systems and methods
IN2014DE03160A (en)
MX344792B (en) Systems and methods for multi-analysis.
IN2015MN00088A (en)
WO2012047394A3 (en) Efficient seismic source operation in connection with a seismic survey
GB201116961D0 (en) Fast calibration for lidars
WO2012123898A3 (en) Sound processing based on confidence measure
WO2012117291A3 (en) Fully digital chaotic differential equation-based systems and methods
MX2011007160A (en) Person-to-person funds transfer.
WO2014159294A3 (en) Using satellite visibility data for improved location accuracy
MX346313B (en) Method for controlling a wind turbine.
WO2013090397A3 (en) Timing circuit calibration in devices with selectable power modes
IN2014DE03240A (en)
WO2014121239A3 (en) Multiplexed digital assay with data exclusion for calculation of target levels
WO2012168303A3 (en) Method and device for generating an arc detection signal and arc detection arrangement
WO2012177861A3 (en) Power management for an electronic device
MX2016004704A (en) Method and apparatus for time of flight fingerprint and geo-location.
IN2013CH00215A (en)
WO2011088411A3 (en) Affecting a navigation function in response to a perceived transition from one environment to another
MX2014002805A (en) A method and system of recalibrating an inertial sensor.
WO2013028807A3 (en) Renal cell carcinoma biomarkers and uses thereof
WO2014140912A3 (en) Apparatus for inserting delay, nuclear medicine imaging apparatus, method for inserting delay, and method of calibration
WO2014145467A3 (en) Multiplexed digital assay for variant and normal forms of a gene of interest
WO2012021413A3 (en) Time-setting in satellite positioning system receivers
WO2013168148A3 (en) A method for dynamic generation and modification of an electronic entity architecture

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 12816850

Country of ref document: EP

Kind code of ref document: A2

WWE Wipo information: entry into national phase

Ref document number: 112012003071

Country of ref document: DE

Ref document number: 1120120030710

Country of ref document: DE

122 Ep: pct application non-entry in european phase

Ref document number: 12816850

Country of ref document: EP

Kind code of ref document: A2