WO2011109487A8 - Method and apparatus for testing a memory device - Google Patents

Method and apparatus for testing a memory device Download PDF

Info

Publication number
WO2011109487A8
WO2011109487A8 PCT/US2011/026826 US2011026826W WO2011109487A8 WO 2011109487 A8 WO2011109487 A8 WO 2011109487A8 US 2011026826 W US2011026826 W US 2011026826W WO 2011109487 A8 WO2011109487 A8 WO 2011109487A8
Authority
WO
WIPO (PCT)
Prior art keywords
testing
semiconductor device
memory device
controller
well
Prior art date
Application number
PCT/US2011/026826
Other languages
French (fr)
Other versions
WO2011109487A1 (en
Inventor
Baker S. Mohammad
Hong S. Kim
Paul Douglas Bassett
Original Assignee
Qualcomm Incorporated
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Incorporated filed Critical Qualcomm Incorporated
Publication of WO2011109487A1 publication Critical patent/WO2011109487A1/en
Publication of WO2011109487A8 publication Critical patent/WO2011109487A8/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2642—Testing semiconductor operation lifetime or reliability, e.g. by accelerated life tests
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger

Abstract

In a particular embodiment, a method includes receiving a testing activation signal (138) at a controller (108) coupled to a semiconductor device (104). The method further includes biasing a well (142) of at least one transistor of the semiconductor device in response to the received testing activation signal. The bias is provided by a biasing circuit (106) that is responsive to the controller. While the well is biased, a test of the semiconductor device is performed to generate testing data.
PCT/US2011/026826 2010-03-03 2011-03-02 Method and apparatus for testing a memory device WO2011109487A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/716,341 2010-03-03
US12/716,341 US8466707B2 (en) 2010-03-03 2010-03-03 Method and apparatus for testing a memory device

Publications (2)

Publication Number Publication Date
WO2011109487A1 WO2011109487A1 (en) 2011-09-09
WO2011109487A8 true WO2011109487A8 (en) 2011-10-27

Family

ID=44140936

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2011/026826 WO2011109487A1 (en) 2010-03-03 2011-03-02 Method and apparatus for testing a memory device

Country Status (3)

Country Link
US (2) US8466707B2 (en)
TW (1) TW201218201A (en)
WO (1) WO2011109487A1 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8466707B2 (en) * 2010-03-03 2013-06-18 Qualcomm Incorporated Method and apparatus for testing a memory device
US8823385B2 (en) * 2011-03-10 2014-09-02 Infineon Technologies Ag Detection of pre-catastrophic, stress induced leakage current conditions for dielectric layers
US8575993B2 (en) 2011-08-17 2013-11-05 Broadcom Corporation Integrated circuit with pre-heating for reduced subthreshold leakage
US9613691B2 (en) * 2015-03-27 2017-04-04 Intel Corporation Apparatus and method for drift cancellation in a memory
KR20170013577A (en) * 2015-07-28 2017-02-07 에스케이하이닉스 주식회사 Semiconductor device
US9824767B1 (en) 2016-06-29 2017-11-21 Intel Corporation Methods and apparatus to reduce threshold voltage drift
CN110672943B (en) * 2019-09-26 2022-11-08 宁波大学 Aging detection sensor based on voltage comparator
US11099229B2 (en) * 2020-01-10 2021-08-24 Cisco Technology, Inc. Connectivity verification for flip-chip and advanced packaging technologies
CN113760194B (en) * 2021-09-09 2024-03-12 合肥兆芯电子有限公司 Memory temperature control method and memory temperature control system
CN116148549A (en) * 2021-11-19 2023-05-23 英业达科技有限公司 System and method for testing radiation sensitivity

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CA2308820A1 (en) * 2000-05-15 2001-11-15 The Governors Of The University Of Alberta Wireless radio frequency technique design and method for testing of integrated circuits and wafers
US6815970B2 (en) 2001-08-31 2004-11-09 Texas Instruments Incorporated Method for measuring NBTI degradation effects on integrated circuits
US6731179B2 (en) 2002-04-09 2004-05-04 International Business Machines Corporation System and method for measuring circuit performance degradation due to PFET negative bias temperature instability (NBTI)
US6989698B2 (en) * 2002-08-26 2006-01-24 Integrant Technologies Inc. Charge pump circuit for compensating mismatch of output currents
US7177201B1 (en) 2003-09-17 2007-02-13 Sun Microsystems, Inc. Negative bias temperature instability (NBTI) preconditioning of matched devices
US6900656B1 (en) * 2003-11-10 2005-05-31 Texas Instruments Incorporated Method of testing an integrated circuit and an integrated circuit test apparatus
US7183791B2 (en) * 2004-10-11 2007-02-27 Lsi Logic Corporation Reliability circuit for applying an AC stress signal or DC measurement to a transistor device
US20060267621A1 (en) * 2005-05-27 2006-11-30 Harris Edward B On-chip apparatus and method for determining integrated circuit stress conditions
JP2007157287A (en) 2005-12-07 2007-06-21 Matsushita Electric Ind Co Ltd Semiconductor storage device
JP4996215B2 (en) * 2006-11-28 2012-08-08 ルネサスエレクトロニクス株式会社 Semiconductor device test method
US7665003B2 (en) * 2006-12-15 2010-02-16 Qualcomm Incorporated Method and device for testing memory
US7859340B2 (en) * 2007-03-30 2010-12-28 Qualcomm Incorporated Metal-oxide-semiconductor circuit designs and methods for operating same
US7827018B2 (en) 2007-11-16 2010-11-02 International Business Machines Corporation Method and computer program for selecting circuit repairs using redundant elements with consideration of aging effects
US7642864B2 (en) * 2008-01-29 2010-01-05 International Business Machines Corporation Circuits and design structures for monitoring NBTI (negative bias temperature instability) effect and/or PBTI (positive bias temperature instability) effect
US7872930B2 (en) * 2008-05-15 2011-01-18 Qualcomm, Incorporated Testing a memory device having field effect transistors subject to threshold voltage shifts caused by bias temperature instability
US8466707B2 (en) * 2010-03-03 2013-06-18 Qualcomm Incorporated Method and apparatus for testing a memory device
US8659322B2 (en) * 2011-01-28 2014-02-25 Freescale Semiconductor, Inc. Memory having a latching sense amplifier resistant to negative bias temperature instability and method therefor

Also Published As

Publication number Publication date
US20110215827A1 (en) 2011-09-08
US8466707B2 (en) 2013-06-18
US8884637B2 (en) 2014-11-11
US20130257466A1 (en) 2013-10-03
TW201218201A (en) 2012-05-01
WO2011109487A1 (en) 2011-09-09

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