US20100265026A1 - Passive electrical components with inorganic dielectric coating layer - Google Patents
Passive electrical components with inorganic dielectric coating layer Download PDFInfo
- Publication number
- US20100265026A1 US20100265026A1 US12/829,582 US82958210A US2010265026A1 US 20100265026 A1 US20100265026 A1 US 20100265026A1 US 82958210 A US82958210 A US 82958210A US 2010265026 A1 US2010265026 A1 US 2010265026A1
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- Prior art keywords
- dielectric coating
- coating layer
- passive electrical
- inorganic dielectric
- layer
- Prior art date
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Links
- 239000011247 coating layer Substances 0.000 title abstract description 20
- 239000004020 conductor Substances 0.000 claims abstract description 24
- 239000003990 capacitor Substances 0.000 claims description 17
- 239000010410 layer Substances 0.000 abstract description 30
- 239000000758 substrate Substances 0.000 description 19
- 229910052782 aluminium Inorganic materials 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 238000004549 pulsed laser deposition Methods 0.000 description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 230000035699 permeability Effects 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 7
- 230000015556 catabolic process Effects 0.000 description 5
- 229910010272 inorganic material Inorganic materials 0.000 description 5
- 239000011147 inorganic material Substances 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910000889 permalloy Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 description 1
- 229910001004 magnetic alloy Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- -1 silicon nitrides Chemical class 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000005382 thermal cycling Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/0006—Printed inductances
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/258—Temperature compensation means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/33—Thin- or thick-film capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/0006—Printed inductances
- H01F2017/0066—Printed inductances with a magnetic layer
Definitions
- the present disclosure relates to passive electrical components.
- SOS silicon-on-sapphire
- WBG wide-band gap
- FIG. 1 is a sectional view through a passive electrical component
- FIG. 2A schematically illustrates a coupon testing proof of concept having a multiple of capacitor areas
- FIG. 2B illustrates the scale of the capacitor area
- FIGS. 3A-3N illustrate particular coupons with an Average Capacitance/Breakdown Voltage for each capacitor area C on the coupon.
- FIG. 4 is a graph which defines a capacitance per area based in part on the material combination of a inorganic dielectric coating layer
- FIG. 5 is a sectional view through another passive electrical component
- FIG. 6 is a sectional view through another passive electrical component
- FIG. 7 is a sectional view through another passive electrical component.
- FIG. 8 is a schematic view of a passive electrical component mounted to a substrate which is a case for other electronic components.
- FIG. 1 schematically illustrates a passive electrical component 10 A which in this disclosed non-limiting embodiment is illustrated as a capacitor 12 .
- the capacitor 12 includes a multiple of conductor layers 14 with an inorganic dielectric coating layer 16 therebetween. When a voltage potential difference occurs between the conductor layers 14 , an electric field occurs in the inorganic dielectric coating layer 16 as generally understood.
- the capacitor 12 may include a multiple of layers, here illustrated with three inorganic dielectric coating layers 16 and alternating connected conductor layers 14 .
- the capacitor 12 may be formed on a substrate 18 .
- the substrate 18 may be a conductive substrate such as aluminum or a non-conductive substrate deposited with a conductive layer such as silicon carbide (SiC) layered with aluminum.
- the aluminum may be polished to provide a surface roughness of approximately 20 nm to 85 nm.
- the conductor layers 14 may be formed of, for example, aluminum, nickel, copper, gold or other conductive inorganic material or combination of materials.
- Various aspects of the present disclosure are described with reference to a multiple of inorganic dielectric coating layers 16 and alternating connected conductor layers 14 formed adjacent or on the substrate or upon another layer. As will be appreciated by those of skill in the art, references to a layer formed on or adjacent another layer or substrate contemplates that additional other layers may intervene.
- the inorganic dielectric coating layer 16 may be formed of, for example, halfnium oxide, silicone dioxide, silicon nitrides, fused aluminum oxide, Al 0.66 Hf 0.33 O 3 , Al 0.8 Hf 0.2 O 3 , Al 0.5 Y 0.5 O 3 , or other inorganic materials or combination of inorganic materials. In one non-limiting embodiment, the inorganic dielectric coating layer 16 may be deposited to a thickness from approximately 0.6 microns to 10 microns.
- the inorganic dielectric coating layer 16 may be applied through a pulsed laser deposition (PLD) process such as that provided by Blue Wave Semiconductors, Inc. of Columbia, Md. USA.
- PLD pulsed laser deposition
- the PLD process facilitates multiple combinations of metal-oxides and nitrides on SiC, Si, AN, Al, Cu, Ni or any other suitable flat surface.
- a multilayer construction of dielectric stacks, with atomic and coating interface arrangements of crystalline and amorphous films may additionally be provided.
- the inorganic dielectric coating layer 16 provides a relatively close coefficient of thermal expansion (CTE) match to an SiC substrate so as to resist the thermal cycling typical of high temperature operations.
- CTE coefficient of thermal expansion
- the PLD process facilitates a robust coating and the engineered material allows, in one non-limiting embodiment, 3 microns of the inorganic dielectric coating layer 16 to store approximately 1000V.
- the PLD process facilitates deposition of the inorganic dielectric coating layer 16 that can provide a flat dielectric constant at approximately 300° C. and the ability to place the inorganic dielectric coating layer 16 in various spaces so as to minimize wasted space. It should be understood that the PLD process facilitates deposition of the inorganic dielectric coating layer 16 on various surfaces inclusive of flat and curves surfaces.
- Some factors which may affect the quality of the capacitor include the substrate surface smoothness, the smoothness of the oxide layer, and the thickness and surface area of the inorganic dielectric coating layer 16 .
- a relatively thicker inorganic dielectric coating layer 16 provides a higher breakdown voltage but may facilitate cracks.
- a relatively larger electrode surface area tends to have more defects and therefore decrease breakdown voltage while a relatively smaller surface area tends to have a higher capacitor density and a higher breakdown voltage.
- coupon testing proof of concept has show that the size of the capacitor 12 compared to current state-of-the art technology results in an approximately twenty times reduction in size and mass for the same voltage rating.
- Each coupon includes a multiple of capacitor areas C ( FIG. 2B ) with top contacts manufactured of aluminum for evaluation.
- FIGS. 3A-3N illustrates particular coupons with an average capacitance/breakdown voltage for each capacitor area C on the coupon. The test results provide a capacitance per area based in part on the material combination of the inorganic dielectric coating layer 16 ( FIG. 4 ).
- the inductor 20 includes a multiple of conductor layers 22 , a multiple of high permeability layers 24 and an inorganic dielectric coating layer 26 between each conductor layer 22 and high permeability layer 24 .
- the inductor 20 may include a multiple of layers, here illustrated with two conductor layers 22 and two high permeability layers 24 .
- the multiple of conductor layers 22 and high permeability layers 24 may be built up upon the substrate 18 as a series of layers.
- the inductor 20 may be rectilinear in cross-section or of other cross-sectional shapes such as round ( FIG. 6 ) which are built up about a wire or other solid.
- the inductor 20 may be formed on a substrate 18 .
- the substrate 18 may be a conductive substrate such as aluminum or a non-conductive substrate deposited with a conductive layer such as silicon carbide (SiC) layered with aluminum or other material.
- SiC silicon carbide
- the conductor layers 22 may be formed of, for example, aluminum, nickel, copper, gold or other conductive inorganic material or combination of materials.
- the high permeability layers 24 may be manufactured of a permalloy material which is typically a nickel iron magnetic alloy.
- the permalloy material in one non-limiting embodiment, includes an alloy with about 20% iron and 80% nickel content.
- the high permeability layer 24 has a relatively high magnetic permeability, low coercivity, near zero magnetostriction, and significant anisotropic magnetoresistance.
- the inorganic dielectric coating layer 26 may be formed by the PLD process as previously described to separate the current flow through each conductor layer 22 and each high permeability layers 24 which travel in opposite directions.
- System benefits of the high temperature passive electrical components disclosed herein include reduced weight and robust designs.
- the combination of high temperature electronic devices with high temperature passive electrical components provide effective operations in temperatures of up to 300° C. with relatively smaller, lighter heat sinks and/or the elimination of active cooling systems.
- inductor and capacitor are disclosed as passive electrical components, it should be understood that other passive electrical components such as resistors, strain gauges and others may be manufactured as disclosed herein.
- the inductor and capacitor may be deposited on the same substrate in various combinations to form power dense filters for power applications and general extreme environment electronic systems.
- a resistor 30 formed on a substrate 18 .
- the substrate 18 may be manufactured of a non-conductive material such as Alumina or a conductive material with a non-conductive layer formed by the PLD process as previously described.
- Each conductive contact 32 and a resistive element 34 may also be formed by the PLD process.
- the resistor element 34 may include a mix of dielectric and conductive particles within an inorganic material of a resistive nature.
- passive electrical components 10 may be deposited directly upon a substrate which defines a module 40 for other electrical components.
- the other electrical components may be mounted within the module 40 in electrical communication with the passive electrical components 10 so as to provide a compact system such as the aforementioned portable/emergency power generators and aerospace power units. It should be understood that the passive electrical components 10 may alternatively be deposited on other substrates which provide other mechanical or electrical functionality.
Abstract
Description
- The present disclosure is a continuation application of U.S. patent application Ser. No. 12/344570, filed Dec. 28, 2008.
- The present disclosure relates to passive electrical components.
- The advent of relatively high temperature semiconductor devices, such as silicon-on-sapphire (SOS) and wide-band gap (WBG) semiconductors, has produced devices which can operate at high temperatures from 200° C. to 300° C. base plate temperatures. In comparison, silicon based devices have maximum base plate temperatures of 85° C. to 125° C.
- However, not all passive electrical components used with the high temperature semiconductor devices have been optimized for such high temperatures. Current passive electrical components provide significantly reduced efficiency in a 300° C. environment.
- Various features will become apparent to those skilled in the art from the following detailed description of the disclosed non-limiting embodiment. The drawings that accompany the detailed description can be briefly described as follows:
-
FIG. 1 is a sectional view through a passive electrical component; -
FIG. 2A schematically illustrates a coupon testing proof of concept having a multiple of capacitor areas; -
FIG. 2B illustrates the scale of the capacitor area; -
FIGS. 3A-3N illustrate particular coupons with an Average Capacitance/Breakdown Voltage for each capacitor area C on the coupon. -
FIG. 4 is a graph which defines a capacitance per area based in part on the material combination of a inorganic dielectric coating layer; -
FIG. 5 is a sectional view through another passive electrical component; -
FIG. 6 is a sectional view through another passive electrical component; -
FIG. 7 is a sectional view through another passive electrical component; and -
FIG. 8 is a schematic view of a passive electrical component mounted to a substrate which is a case for other electronic components. -
FIG. 1 schematically illustrates a passiveelectrical component 10A which in this disclosed non-limiting embodiment is illustrated as acapacitor 12. Thecapacitor 12 includes a multiple ofconductor layers 14 with an inorganicdielectric coating layer 16 therebetween. When a voltage potential difference occurs between theconductor layers 14, an electric field occurs in the inorganicdielectric coating layer 16 as generally understood. Thecapacitor 12 may include a multiple of layers, here illustrated with three inorganicdielectric coating layers 16 and alternating connectedconductor layers 14. - The
capacitor 12 may be formed on asubstrate 18. Thesubstrate 18 may be a conductive substrate such as aluminum or a non-conductive substrate deposited with a conductive layer such as silicon carbide (SiC) layered with aluminum. In one non-limiting embodiment, the aluminum may be polished to provide a surface roughness of approximately 20 nm to 85 nm. - The
conductor layers 14 may be formed of, for example, aluminum, nickel, copper, gold or other conductive inorganic material or combination of materials. Various aspects of the present disclosure are described with reference to a multiple of inorganicdielectric coating layers 16 and alternating connectedconductor layers 14 formed adjacent or on the substrate or upon another layer. As will be appreciated by those of skill in the art, references to a layer formed on or adjacent another layer or substrate contemplates that additional other layers may intervene. - The inorganic
dielectric coating layer 16 may be formed of, for example, halfnium oxide, silicone dioxide, silicon nitrides, fused aluminum oxide, Al0.66Hf0.33O3, Al0.8Hf0.2O3, Al0.5Y0.5O3, or other inorganic materials or combination of inorganic materials. In one non-limiting embodiment, the inorganicdielectric coating layer 16 may be deposited to a thickness from approximately 0.6 microns to 10 microns. - The inorganic
dielectric coating layer 16 may be applied through a pulsed laser deposition (PLD) process such as that provided by Blue Wave Semiconductors, Inc. of Columbia, Md. USA. The PLD process facilitates multiple combinations of metal-oxides and nitrides on SiC, Si, AN, Al, Cu, Ni or any other suitable flat surface. A multilayer construction of dielectric stacks, with atomic and coating interface arrangements of crystalline and amorphous films may additionally be provided. The inorganicdielectric coating layer 16 provides a relatively close coefficient of thermal expansion (CTE) match to an SiC substrate so as to resist the thermal cycling typical of high temperature operations. The PLD process facilitates a robust coating and the engineered material allows, in one non-limiting embodiment, 3 microns of the inorganicdielectric coating layer 16 to store approximately 1000V. - The PLD process facilitates deposition of the inorganic
dielectric coating layer 16 that can provide a flat dielectric constant at approximately 300° C. and the ability to place the inorganicdielectric coating layer 16 in various spaces so as to minimize wasted space. It should be understood that the PLD process facilitates deposition of the inorganicdielectric coating layer 16 on various surfaces inclusive of flat and curves surfaces. - Some factors which may affect the quality of the capacitor include the substrate surface smoothness, the smoothness of the oxide layer, and the thickness and surface area of the inorganic
dielectric coating layer 16. A relatively thicker inorganicdielectric coating layer 16 provides a higher breakdown voltage but may facilitate cracks. A relatively larger electrode surface area tends to have more defects and therefore decrease breakdown voltage while a relatively smaller surface area tends to have a higher capacitor density and a higher breakdown voltage. - During development of the passive electrical component of the present disclosure, various material test coupons were evaluated. The operational capabilities of the capacitor are further defined from the following examples.
- Referring to
FIG. 2A , coupon testing proof of concept has show that the size of thecapacitor 12 compared to current state-of-the art technology results in an approximately twenty times reduction in size and mass for the same voltage rating. Each coupon includes a multiple of capacitor areas C (FIG. 2B ) with top contacts manufactured of aluminum for evaluation.FIGS. 3A-3N illustrates particular coupons with an average capacitance/breakdown voltage for each capacitor area C on the coupon. The test results provide a capacitance per area based in part on the material combination of the inorganic dielectric coating layer 16 (FIG. 4 ). - Referring to
FIG. 5 , another passiveelectrical component 10B is illustrated as aninductor 20. Capacitors are to electric fields what inductors are to magnetic fields. Theinductor 20 includes a multiple ofconductor layers 22, a multiple ofhigh permeability layers 24 and an inorganicdielectric coating layer 26 between eachconductor layer 22 andhigh permeability layer 24. Theinductor 20 may include a multiple of layers, here illustrated with twoconductor layers 22 and twohigh permeability layers 24. The multiple ofconductor layers 22 andhigh permeability layers 24 may be built up upon thesubstrate 18 as a series of layers. Theinductor 20 may be rectilinear in cross-section or of other cross-sectional shapes such as round (FIG. 6 ) which are built up about a wire or other solid. - The
inductor 20 may be formed on asubstrate 18. Thesubstrate 18 may be a conductive substrate such as aluminum or a non-conductive substrate deposited with a conductive layer such as silicon carbide (SiC) layered with aluminum or other material. - The conductor layers 22 may be formed of, for example, aluminum, nickel, copper, gold or other conductive inorganic material or combination of materials.
- The high permeability layers 24 may be manufactured of a permalloy material which is typically a nickel iron magnetic alloy. The permalloy material, in one non-limiting embodiment, includes an alloy with about 20% iron and 80% nickel content. The
high permeability layer 24 has a relatively high magnetic permeability, low coercivity, near zero magnetostriction, and significant anisotropic magnetoresistance. - The inorganic
dielectric coating layer 26 may be formed by the PLD process as previously described to separate the current flow through eachconductor layer 22 and eachhigh permeability layers 24 which travel in opposite directions. - System benefits of the high temperature passive electrical components disclosed herein include reduced weight and robust designs. The combination of high temperature electronic devices with high temperature passive electrical components provide effective operations in temperatures of up to 300° C. with relatively smaller, lighter heat sinks and/or the elimination of active cooling systems.
- Although an inductor and capacitor are disclosed as passive electrical components, it should be understood that other passive electrical components such as resistors, strain gauges and others may be manufactured as disclosed herein. The inductor and capacitor may be deposited on the same substrate in various combinations to form power dense filters for power applications and general extreme environment electronic systems.
- Referring to
FIG. 7 , another passiveelectrical component 10C is illustrated as aresistor 30 formed on asubstrate 18. Thesubstrate 18 may be manufactured of a non-conductive material such as Alumina or a conductive material with a non-conductive layer formed by the PLD process as previously described. Eachconductive contact 32 and aresistive element 34 may also be formed by the PLD process. In one non-limiting embodiment, theresistor element 34 may include a mix of dielectric and conductive particles within an inorganic material of a resistive nature. - Referring to
FIG. 8 , passive electrical components 10 may be deposited directly upon a substrate which defines amodule 40 for other electrical components. The other electrical components may be mounted within themodule 40 in electrical communication with the passive electrical components 10 so as to provide a compact system such as the aforementioned portable/emergency power generators and aerospace power units. It should be understood that the passive electrical components 10 may alternatively be deposited on other substrates which provide other mechanical or electrical functionality. - It should be understood that like reference numerals identify corresponding or similar elements throughout the several drawings. It should also be understood that although a particular component arrangement is disclosed in the illustrated embodiment, other arrangements will benefit herefrom.
- The foregoing description is exemplary rather than defined by the limitations within. Various non-limiting embodiments are disclosed herein, however, one of ordinary skill in the art would recognize that various modifications and variations in light of the above teachings will fall within the scope of the appended claims.
Claims (3)
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US12/344,570 US7786839B2 (en) | 2008-12-28 | 2008-12-28 | Passive electrical components with inorganic dielectric coating layer |
US12/829,582 US20100265026A1 (en) | 2008-12-28 | 2010-07-02 | Passive electrical components with inorganic dielectric coating layer |
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US20140327511A1 (en) * | 2013-05-03 | 2014-11-06 | Delta Electronics, Inc. | Primary side module and transformer with same |
US9349521B2 (en) * | 2013-05-03 | 2016-05-24 | Delta Electronics, Inc. | Primary side module and transformer with same |
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US7786839B2 (en) | 2010-08-31 |
US20100164669A1 (en) | 2010-07-01 |
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