CN1408118A - 一种改进的高密度存储单元 - Google Patents
一种改进的高密度存储单元 Download PDFInfo
- Publication number
- CN1408118A CN1408118A CN01805996A CN01805996A CN1408118A CN 1408118 A CN1408118 A CN 1408118A CN 01805996 A CN01805996 A CN 01805996A CN 01805996 A CN01805996 A CN 01805996A CN 1408118 A CN1408118 A CN 1408118A
- Authority
- CN
- China
- Prior art keywords
- transistor
- unit
- node
- memory cell
- line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
- G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
- G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
- G11C15/043—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements using capacitive charge storage elements
Abstract
Description
Claims (21)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CA002299991A CA2299991A1 (en) | 2000-03-03 | 2000-03-03 | A memory cell for embedded memories |
CA2,299,991 | 2000-03-03 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1408118A true CN1408118A (zh) | 2003-04-02 |
CN1248237C CN1248237C (zh) | 2006-03-29 |
Family
ID=4165447
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB018059961A Expired - Fee Related CN1248237C (zh) | 2000-03-03 | 2001-03-05 | 一种改进的高密度存储单元 |
Country Status (9)
Country | Link |
---|---|
US (1) | US6751111B2 (zh) |
JP (1) | JP4903338B2 (zh) |
KR (1) | KR100743808B1 (zh) |
CN (1) | CN1248237C (zh) |
AU (1) | AU2001242125A1 (zh) |
CA (1) | CA2299991A1 (zh) |
DE (1) | DE10195853T1 (zh) |
GB (1) | GB2375642B (zh) |
WO (1) | WO2001065565A1 (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101819815A (zh) * | 2010-04-29 | 2010-09-01 | 上海宏力半导体制造有限公司 | 一种消除读取干扰的静态随机存储器 |
CN101877243A (zh) * | 2010-04-22 | 2010-11-03 | 上海宏力半导体制造有限公司 | 静态随机存取存储器 |
CN102034531A (zh) * | 2010-05-28 | 2011-04-27 | 上海宏力半导体制造有限公司 | 一种减少读取干扰的静态随机存储器 |
CN105913870A (zh) * | 2015-02-25 | 2016-08-31 | 瑞萨电子株式会社 | 半导体存储器装置 |
CN110729299A (zh) * | 2018-07-16 | 2020-01-24 | 台湾积体电路制造股份有限公司 | 存储器单元和形成存储器电路的方法 |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA2307240C (en) * | 2000-05-01 | 2011-04-12 | Mosaid Technologies Incorporated | Matchline sense circuit and method |
JP2002237190A (ja) * | 2001-02-07 | 2002-08-23 | Kawasaki Microelectronics Kk | 連想メモリ装置およびその構成方法 |
US20030123279A1 (en) * | 2002-01-03 | 2003-07-03 | International Business Machines Corporation | Silicon-on-insulator SRAM cells with increased stability and yield |
US6771525B2 (en) * | 2002-05-31 | 2004-08-03 | Mosaid Technologies Incorporated | Method and apparatus for performing variable word width searches in a content addressable memory |
US6900999B1 (en) * | 2003-06-30 | 2005-05-31 | Integrated Device Technology, Inc. | Ternary content addressable memory (TCAM) cells with small footprint size and efficient layout aspect ratio |
US20060203529A1 (en) | 2003-09-05 | 2006-09-14 | William Radke | Cutting CAM peak power by clock regioning |
US7205614B2 (en) * | 2004-01-06 | 2007-04-17 | Faraday Technology Corp. | High density ROM cell |
WO2006073060A1 (ja) | 2004-12-16 | 2006-07-13 | Nec Corporation | 半導体記憶装置 |
US7570527B2 (en) * | 2005-06-02 | 2009-08-04 | Texas Instruments Incorporated | Static random-access memory having reduced bit line precharge voltage and method of operating the same |
US7643329B2 (en) * | 2006-01-10 | 2010-01-05 | Certichip Inc. | Asymmetric four-transistor SRAM cell |
US7313012B2 (en) * | 2006-02-27 | 2007-12-25 | International Business Machines Corporation | Back-gate controlled asymmetrical memory cell and memory using the cell |
US7298636B1 (en) | 2006-03-08 | 2007-11-20 | Integrated Device Technology, Inc. | Packet processors having multi-functional range match cells therein |
US7825777B1 (en) | 2006-03-08 | 2010-11-02 | Integrated Device Technology, Inc. | Packet processors having comparators therein that determine non-strict inequalities between applied operands |
KR101098706B1 (ko) | 2007-03-19 | 2011-12-23 | 후지쯔 세미컨덕터 가부시키가이샤 | 반도체 메모리 |
US8139400B2 (en) * | 2008-01-22 | 2012-03-20 | International Business Machines Corporation | Enhanced static random access memory stability using asymmetric access transistors and design structure for same |
US8072797B2 (en) * | 2008-07-07 | 2011-12-06 | Certichip Inc. | SRAM cell without dedicated access transistors |
US8363455B2 (en) | 2008-12-04 | 2013-01-29 | David Rennie | Eight transistor soft error robust storage cell |
US8400802B2 (en) * | 2009-11-04 | 2013-03-19 | University-Industry Cooperation Group Of Kyunghee University | Binary content addressable memory |
US20110157964A1 (en) * | 2009-12-30 | 2011-06-30 | Mcpartland Richard J | Memory Cell Using Leakage Current Storage Mechanism |
JP2016054015A (ja) * | 2014-09-04 | 2016-04-14 | 株式会社東芝 | 半導体記憶装置とその駆動方法 |
US10431576B1 (en) * | 2018-04-20 | 2019-10-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Memory cell array and method of manufacturing same |
KR102615012B1 (ko) | 2018-11-12 | 2023-12-19 | 삼성전자주식회사 | 메모리 장치 및 그것의 동작 방법 |
CN112783256B (zh) * | 2019-11-08 | 2022-06-24 | 奇景光电股份有限公司 | 基于亚阈值区域的低压差稳压器 |
CN111899775A (zh) * | 2020-07-24 | 2020-11-06 | 安徽大学 | 一种可实现多种逻辑功能和bcam运算的sram存储单元电路 |
Family Cites Families (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3701980A (en) * | 1970-08-03 | 1972-10-31 | Gen Electric | High density four-transistor mos content addressed memory |
JPS5916356B2 (ja) * | 1977-04-30 | 1984-04-14 | シャープ株式会社 | Cmos・スタチツク・ランダム・アクセス・メモリ |
JPS5475237A (en) * | 1977-11-29 | 1979-06-15 | Fujitsu Ltd | Four-transistor static memory cell |
JPS6076085A (ja) * | 1983-09-30 | 1985-04-30 | Toshiba Corp | 半導体記憶装置 |
JPS6124092A (ja) * | 1984-07-13 | 1986-02-01 | Toshiba Corp | 半導体記憶装置 |
JPS61145792A (ja) * | 1984-12-19 | 1986-07-03 | Matsushita Electric Ind Co Ltd | 記憶回路 |
US4831585A (en) * | 1985-11-27 | 1989-05-16 | Massachusetts Institute Of Technology | Four transistor cross-coupled bitline content addressable memory |
US4694425A (en) * | 1986-07-10 | 1987-09-15 | Intel Corporation | Seven transistor content addressable memory (CAM) cell |
US4799192A (en) * | 1986-08-28 | 1989-01-17 | Massachusetts Institute Of Technology | Three-transistor content addressable memory |
US4791606A (en) * | 1987-09-01 | 1988-12-13 | Triad Semiconductors International Bv | High density CMOS dynamic CAM cell |
GB2243233A (en) * | 1990-04-06 | 1991-10-23 | Mosaid Inc | DRAM word line driver |
US5226005A (en) * | 1990-11-19 | 1993-07-06 | Unisys Corporation | Dual ported content addressable memory cell and array |
US5258946A (en) * | 1991-02-13 | 1993-11-02 | At&T Bell Laboratories | Content-addressable memory |
JPH0562474A (ja) * | 1991-08-29 | 1993-03-12 | Nec Corp | 半導体メモリ装置 |
US5383146A (en) * | 1992-06-08 | 1995-01-17 | Music Semiconductors, Inc. | Memory with CAM and RAM partitions |
JPH06203580A (ja) * | 1992-07-16 | 1994-07-22 | Hal Computer Syst Inc | コンテントアドレサブルメモリセル |
JP2636159B2 (ja) * | 1994-01-07 | 1997-07-30 | ハル・コンピュータ・システムズ,インコーポレイテッド | 連想メモリセルに「ドントケア」を記憶するための装置 |
US5396469A (en) * | 1994-03-31 | 1995-03-07 | Hewlett-Packard Company | SRAM memory requiring reduced voltage swing during write |
US5600598A (en) * | 1994-12-14 | 1997-02-04 | Mosaid Technologies Incorporated | Memory cell and wordline driver for embedded DRAM in ASIC process |
KR0146187B1 (ko) * | 1995-01-20 | 1998-11-02 | 김광호 | 2트랜지스터 고저항 부하형 에스램 셀 |
US5640342A (en) * | 1995-11-20 | 1997-06-17 | Micron Technology, Inc. | Structure for cross coupled thin film transistors and static random access memory cell |
DE69829539T2 (de) * | 1997-11-26 | 2005-09-01 | Texas Instruments Inc., Dallas | Verbesserungen an oder bei Rechnerspeichern |
DE69727939D1 (de) * | 1997-11-28 | 2004-04-08 | St Microelectronics Srl | RAM-Speicherzelle mit niedriger Leistungsaufnahme und einer einzigen Bitleitung |
JPH11185474A (ja) * | 1997-12-17 | 1999-07-09 | Sharp Corp | 半導体記憶装置 |
JPH11260063A (ja) * | 1998-03-10 | 1999-09-24 | Hitachi Ltd | 半導体装置 |
US5973985A (en) * | 1998-08-11 | 1999-10-26 | Stmicroelectronics, Inc. | Dual port SRAM cell having pseudo ground line or pseudo power line |
WO2000019444A1 (de) * | 1998-09-30 | 2000-04-06 | Infineon Technologies Ag | Single-port speicherzelle |
US6005790A (en) * | 1998-12-22 | 1999-12-21 | Stmicroelectronics, Inc. | Floating gate content addressable memory |
JPH11260055A (ja) * | 1998-12-25 | 1999-09-24 | Hitachi Ltd | 半導体装置 |
CA2266062C (en) * | 1999-03-31 | 2004-03-30 | Peter Gillingham | Dynamic content addressable memory cell |
US6157558A (en) * | 1999-05-21 | 2000-12-05 | Sandisk Corporation | Content addressable memory cell and array architectures having low transistor counts |
US6442060B1 (en) * | 2000-05-09 | 2002-08-27 | Monolithic System Technology, Inc. | High-density ratio-independent four-transistor RAM cell fabricated with a conventional logic process |
JP4885365B2 (ja) * | 2000-05-16 | 2012-02-29 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US6400593B1 (en) * | 2001-02-08 | 2002-06-04 | Intregrated Device Technology, Inc. | Ternary CAM cell with DRAM mask circuit |
CA2342575A1 (en) * | 2001-04-03 | 2002-10-03 | Mosaid Technologies Incorporated | Content addressable memory cell |
-
2000
- 2000-03-03 CA CA002299991A patent/CA2299991A1/en not_active Abandoned
-
2001
- 2001-03-05 KR KR1020027011589A patent/KR100743808B1/ko not_active IP Right Cessation
- 2001-03-05 JP JP2001564165A patent/JP4903338B2/ja not_active Expired - Fee Related
- 2001-03-05 DE DE10195853T patent/DE10195853T1/de not_active Withdrawn
- 2001-03-05 WO PCT/CA2001/000273 patent/WO2001065565A1/en active Application Filing
- 2001-03-05 CN CNB018059961A patent/CN1248237C/zh not_active Expired - Fee Related
- 2001-03-05 AU AU2001242125A patent/AU2001242125A1/en not_active Abandoned
- 2001-03-05 GB GB0219973A patent/GB2375642B/en not_active Expired - Fee Related
-
2002
- 2002-08-26 US US10/227,380 patent/US6751111B2/en not_active Expired - Lifetime
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101877243A (zh) * | 2010-04-22 | 2010-11-03 | 上海宏力半导体制造有限公司 | 静态随机存取存储器 |
CN101877243B (zh) * | 2010-04-22 | 2015-09-30 | 上海华虹宏力半导体制造有限公司 | 静态随机存取存储器 |
CN101819815A (zh) * | 2010-04-29 | 2010-09-01 | 上海宏力半导体制造有限公司 | 一种消除读取干扰的静态随机存储器 |
CN101819815B (zh) * | 2010-04-29 | 2015-05-20 | 上海华虹宏力半导体制造有限公司 | 一种消除读取干扰的静态随机存储器 |
CN102034531A (zh) * | 2010-05-28 | 2011-04-27 | 上海宏力半导体制造有限公司 | 一种减少读取干扰的静态随机存储器 |
CN105913870A (zh) * | 2015-02-25 | 2016-08-31 | 瑞萨电子株式会社 | 半导体存储器装置 |
CN105913870B (zh) * | 2015-02-25 | 2021-04-16 | 瑞萨电子株式会社 | 半导体存储器装置 |
CN110729299A (zh) * | 2018-07-16 | 2020-01-24 | 台湾积体电路制造股份有限公司 | 存储器单元和形成存储器电路的方法 |
Also Published As
Publication number | Publication date |
---|---|
GB2375642A (en) | 2002-11-20 |
KR20030014364A (ko) | 2003-02-17 |
GB2375642B (en) | 2005-02-23 |
WO2001065565A1 (en) | 2001-09-07 |
JP4903338B2 (ja) | 2012-03-28 |
DE10195853T1 (de) | 2003-05-22 |
AU2001242125A1 (en) | 2001-09-12 |
CA2299991A1 (en) | 2001-09-03 |
US6751111B2 (en) | 2004-06-15 |
CN1248237C (zh) | 2006-03-29 |
KR100743808B1 (ko) | 2007-07-30 |
US20030035331A1 (en) | 2003-02-20 |
GB0219973D0 (en) | 2002-10-02 |
JP2003525512A (ja) | 2003-08-26 |
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Owner name: NVIDIA CO., LTD. Free format text: FORMER OWNER: MOSAID TECHNOLOGIES INCORP. Effective date: 20081114 |
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