CN103576066A - Method for measuring service life of hot carrier of semiconductor device - Google Patents
Method for measuring service life of hot carrier of semiconductor device Download PDFInfo
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- CN103576066A CN103576066A CN201210262027.9A CN201210262027A CN103576066A CN 103576066 A CN103576066 A CN 103576066A CN 201210262027 A CN201210262027 A CN 201210262027A CN 103576066 A CN103576066 A CN 103576066A
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Abstract
The invention relates to a method for measuring the service life of a hot carrier of a semiconductor device. The method comprises the steps of (1) measuring the resistance on the grid electrode of the device, wherein the measuring method comprises the steps of (1-1) repetitively and electrically connecting the two ends of the grid electrode of the device, and measuring the resistance of the grid electrode, or (1-2) arranging two virtual grid electrodes on the two sides of the grid electrode on the semiconductor device, enabling one end of one virtual grid electrode to be connected with one end of the other virtual grid electrode, and electrically connecting the other ends of the two virtual grid electrodes to measure the resistance of the two virtual grid electrodes; (2) obtaining the temperature of the grid electrode according to the resistance obtained in the step (1) through measurement and by combining the linear relation between the resistance and the temperature of the grid electrode, and monitoring the actual temperature of the device by measuring the temperature of the grid electrode. According to the method for measuring the service life of the hot carrier of the semiconductor device, the heat resistance on the grid electrode is measured through the two ends of the grid electrode of the device to be measured or by arranging the virtual grid electrodes on the two sides of the grid electrode, the actual temperature of the device to be measured is obtained, the service life of the hot carrier is predicted under the actual temperature, and thus the result is more accurate.
Description
Technical field
The present invention relates to field of semiconductor manufacture, particularly, the present invention relates to the measuring method in a kind of semiconductor devices hot carrier life-span.
Background technology
For VLSI (very large scale integrated circuit) manufacturing industry, along with constantly reducing of MOSFET (mos field effect transistor) plant bulk, semiconductor fabrication process has entered the deep-submicron epoch, and develop to sub-micro, now, semiconductor device reliability more and more directly affects the performance and used life of the IC chip of making.But during due to MOS device size scaled down, device operating voltage does not have corresponding equal proportion and reduces, so, the electric field intensity of corresponding device inside with device size reduce strengthen on the contrary.Therefore, in small size device, the lateral dimension of circuit is more and more less, cause channel length to reduce, even less source-drain voltage also can form very high electric field intensity near drain terminal, due to this transverse electric field effect, at the high electric area of drain terminal, channel electrons obtains very large drift velocity and energy, becomes hot carrier.In deep submicron process, along with day by day dwindling of MOS device size, it is more and more serious that the hot carrier of MOS device is injected (HCI) effect, and the degeneration of the device performance that it causes is to affect one of key factor of MOS device reliability.Therefore, HCI test has become one of main test event of MOS device reliability test.
Because the injection of MOS device hot carrier is according to JEDEC standard, so MOS device HCI test is also carried out according to JEDEC (Joint Electron Device Engineering Council) standard.The life model of the hot carrier test providing in JEDEC standard has 3 kinds, be that drain-source voltage accelerates Vds model, substrate current Isub model and substrate and leakage current ratio Isub/Id model, during practical application, can select as required a kind ofly, what It is generally accepted selects substrate and leakage current ratio Isub/Id model.But no matter for substrate and leakage current ratio Isub/Id model or substrate current Isub model, the way of general HCI test MOS device all needs to load at least 3 different stress voltage conditions, and need to obtain substrate current Isub value and the drain current Id value under each stress voltage condition, and the substrate current Isub value under the required condition of work of projected life and drain current Id value, as shown in Fig. 1 a-b.
At present, the injection of HCI cause device from heating phenomena (self-heating, SH), cause the decline of drive current, become MOS and SOI device (silicon-on-insulator, SOI) a major issue, in addition, when HCI injects, wherein the temperature of passage can rise, when high voltage carries out HCI injection, wherein channel temperature is high more a lot of than predefined temperature, and because the detection of HCI is closely related with temperature, temperature influence is larger, in calculating hot carrier, during the life-span, owing to certainly heating the temperature effect causing, should take in, not so to determining of carrier lifetime, will bring error.
Owing to certainly heating the temperature rising bringing, generally can after 360 seconds, drop to room temperature, therefore, in prior art, in order to eliminate, certainly heat the impact bringing, conventionally adopt in the injection of HCI with between measuring and introduce the impact of eliminating temperature time delay, do not have the channel temperature of elapsed time delay high more a lot of than room temperature, add that to carry out measurement meeting after time delay more accurate again, but still there are a lot of deficiencies in the method, although for example add time delay in some device, but some device can not automatically reply and cool to room temperature or have effect repeatedly within the described time.
Therefore, the impact that the temperature causing from heating while how to eliminate HCI injection rises the detection in HCI life-span is brought, obtains result more accurately, becomes the current problem that needs solution.
Summary of the invention
In summary of the invention part, introduced the concept of a series of reduced forms, this will further describe in embodiment part.Summary of the invention part of the present invention does not also mean that key feature and the essential features that will attempt to limit technical scheme required for protection, does not more mean that the protection domain of attempting to determine technical scheme required for protection.
The invention provides the measuring method in a kind of hot carrier life-span of semiconductor devices more accurately, described method has been eliminated the impact bringing from heating when hot carrier is injected, and said method comprising the steps of:
1) measure the resistance on described device grids, described measuring method is:
1-1) be electrically connected to respectively the two ends of described device grids, measure the resistance of described grid,
Or,
1-2) on described semiconductor devices, grid both sides arrange two dummy gates, and one end of described two dummy gates is connected, and another that is electrically connected to described two dummy gates brought in the resistance of described two dummy gates of test;
2) according to the resistance recording described in step 1), in conjunction with the linear relationship between resistance and temperature, obtain the temperature of described grid, by measuring the temperature of described grid, monitor the actual temperature of described device.
As preferably, described method also comprises step 3):
Calculating is in step 2) described in life-span of hot carrier under actual temperature, set up actual temperature and the one to one relation of hot carrier between the life-span of described device.
As preferably, described method also comprises step 4):
Under stress voltage, inject hot carrier, measure the resistance of described grating of semiconductor element, measure the described hot carrier life-span.
As preferably, described step 3) comprises the following steps:
Under certain stress drain voltage and grid voltage, change the actual temperature of device, utilize substrate/drain current ratio model to obtain the hot carrier life-span under different actual temperatures, set up the actual temperature of described device and the relation one to one in hot carrier life-span.
As preferably, between described step 3) and step 4), comprise following steps: according to step 2) in the linear relationship of actual temperature of resistance and device, and the actual temperature of device described in described step 3) and the one to one relation of hot carrier between the life-span, set up described resistance and the hot carrier relation one to one between the life-span.
As preferably, the contact hole connecting on described grid or dummy gate by wire is measured described resistance.
As preferably, when described grating of semiconductor element two ends do not contact with the web member of measuring instrument, described semiconductor devices is stock size.
As preferably, while not being connected by the contact hole in device and metal level between described two dummy gates, described semiconductor devices is stock size.
As preferably, described hot carrier drain current and all carrying out on same device from adding thermal measurement.
In the present invention by measuring the thermal resistance on grid at device under test grid two ends or by dummy gate being set in grid both sides, and by the thermal resistance recording, obtain the actual temperature of device under test, under actual temperature, predict the life-span of described hot carrier, described method has been considered the influence factors such as stress condition and grid thermal resistance simultaneously, not only eliminated when hot carrier is injected, caused from heating problems, and the prediction in hot carrier life-span is more accurate.
Accompanying drawing explanation
Following accompanying drawing of the present invention is used for understanding the present invention in this as a part of the present invention.Shown in the drawings of embodiments of the invention and description thereof, be used for explaining device of the present invention and principle.In the accompanying drawings,
Fig. 1 a-b is hot carrier Life Calculating Methods schematic diagram in prior art;
Fig. 2 a-b is at the resistance measurement method of grating of semiconductor element in the present invention.
Embodiment
In the following description, a large amount of concrete details have been provided to more thorough understanding of the invention is provided.Yet, it is obvious to the skilled person that the present invention can be implemented without one or more these details.In other example, for fear of obscuring with the present invention, for technical characterictics more well known in the art, be not described.
Should give attention, the term that used is here only in order to describe specific embodiment, but not intention restriction is according to exemplary embodiment of the present invention.As used herein, unless context explicitly points out in addition, otherwise singulative is also intended to comprise plural form.In addition, it is to be further understood that, when using in this manual term " to comprise " and/or when " comprising ", it indicates and has described feature, integral body, step, operation, element and/or assembly, but do not get rid of, does not exist or additional one or more other features, integral body, step, operation, element, assembly and/or their combination.
Now, describe in more detail according to exemplary embodiment of the present invention with reference to the accompanying drawings.Yet these exemplary embodiments can multiple different form be implemented, and should not be interpreted as being only limited to the embodiments set forth herein.To should be understood that, to provide these embodiment of the present inventionly to disclose thoroughly and complete in order making, and the design of these exemplary embodiments is fully conveyed to those of ordinary skills.In the accompanying drawings, for the sake of clarity, exaggerated the thickness in layer and region, and used the identical Reference numeral to represent identical element, thereby will omit description of them.
The invention provides a kind of method of measuring more accurately the hot carrier life-span, described method has been eliminated the impact bringing from heating when hot carrier is injected, and said method comprising the steps of:
1) measure the resistance on described device grids, described measuring method is:
1-1) be electrically connected to respectively the two ends of described device grids, measure the resistance of described grid,
Or,
1-2) on described semiconductor devices, grid both sides arrange two dummy gates, and one end of described two dummy gates is connected, and another that is electrically connected to described two dummy gates brought in the resistance of described two dummy gates of test;
2) according to the resistance recording described in step 1), in conjunction with the linear relationship between resistance and temperature, obtain the temperature of described grid, by measuring the temperature of described grid, monitor the actual temperature of described device.
As preferably, the present invention can further include step 3) and step 4):
3) set up actual temperature and the one to one relation of hot carrier between the life-span of described device;
4) under stress voltage, inject hot carrier, measure the resistance of described grating of semiconductor element, predict the described hot carrier life-span.
Particularly, first measure the resistance on described device grids, described measuring method can have multiple, as long as can measure the resistance of described grid, as preferably the invention provides two kinds of method of testings:
The first, as shown in Figure 2 a, the two ends that are electrically connected to described device grids are tested, described method of testing can have multiple, select in the present invention conventional Kelvin structure for testing the resistance of described grid, connect the electric current wiring 207 at described grid two ends, described grid two ends are applied to electric current, connect the voltage wiring 206 at grid two ends, two ends to described grid apply voltage, then by calculating, can obtain described resistance, described electric current wiring and voltage wiring are formed and are electrically connected to described grid by contact hole 204,205 respectively.The not strict restriction of device size of the present invention, can be stock size, but will guarantee can not be in contact with one another between the two ends of described grid and the web member at grid two ends, if can not guarantee described requirement, increases possibly device size.As preferably, on described device, grid both sides can also be provided with dummy gate 202, and described dummy gate can not contact with the contact hole on described grid and device.
The present invention also provides a kind of method of measuring resistance, as shown in Figure 2 b, in described grid 201 both sides, be respectively equipped with a dummy gate 202, one end of described two dummy gates is electrically connected to by web member 208, described web member 208 can be wire, described connected mode can be selected this area common method, select in the present invention conventional Kelvin structure for testing the resistance of described grid, particularly, connect described two dummy gate other end electric current wiring 207, described dummy gate two ends are applied to electric current, connect the voltage wiring 206 of the dummy gate other end, two ends to described dummy gate apply voltage, then by calculating, can obtain resistance, this resistance calculating is the resistance of grid 201, described electric current wiring and voltage wiring are respectively by contact hole 209, 205 form and are electrically connected to described grid.。Equally, described device can be stock size, as long as can guarantee not to be in contact with one another between contact hole on described two dummy gates and device and metal level, and not strict restriction.As preferably, on the semiconductor under described grid, also there is drain contact hole, source 203.
When hot carrier is made a bet and fashionablely can be recorded by said method the resistance of described grid at higher stress voltage.
Described step 2) be according to the resistance recording described in step 1), in conjunction with the linear relationship between resistance and temperature, obtain described grid temperature, when described grid temperature is injected with hot carrier, device temperature is consistent, monitors the temperature of described device by measuring grid temperature.
Thereby in the present invention by the temperature of device described in the resistance Real-Time Monitoring on the described grid of monitoring, particularly HCI injects and causes after temperature after heating rises, can accurately record the temperature of device, after the accurate temperature of device being detected, at the hot current-carrying of measurement, during the life-span, can have two kinds of methods:
Be a temperature that detects at any time described device, after described temperature reduces room temperature, detecting, another is when described device temperature declines very slowly or can produce repeatedly effect, can continue to perform step 3) and step 4):
Described step 3) is set up actual temperature and the one-to-one relationship of hot carrier between the life-span of described device;
Particularly, under certain stress drain voltage and grid voltage, change the actual temperature of environment and device, utilize substrate/drain current ratio model to obtain the hot carrier life-span under different actual temperatures, set up actual temperature and the one-to-one relationship in hot carrier life-span of described device.In a kind of embodiment of the present invention, first determine leakage pressure Vd, grid voltage Vg in stress condition, then set up substrate/drain current ratio model, the method for building up of described substrate/drain current ratio model is: take NMOS as example, HCI in 3 different Vd situations of general test is such as the Vd1 in the situation that, scanning Vg, measure Isub simultaneously, thereby obtain the Vg that Isubmax is right, then under this Vg and Vd, test the Id situation of change of this device, when Id is first referred to as T1 to the required time after 10% that declines; The acquisition T2 in like manner obtaining at two other different Vd, T3, then curve shown in the similar Fig. 1 b of matching is out.Then utilize described model to detect the life-span of hot carrier under different temperatures, for example, step 2), test environment temperature is that T1 ℃, the actual temperature life-span while being T10 ℃ is N1, then measure many group environment temperature, device actual temperatures and utilize described model to obtain the life-span of hot carrier at this temperature, by the data preparation obtaining, draw device actual temperature and the relation curve of hot carrier between the life-span, the pass of hot carrier life-span and temperature is TTF=A * exp ((Ea/ (kT)), wherein A is constant, k is Boltzmann constant, and Ea is activation energy.Ea is timing, and described actual temperature is higher, and the hot carrier life-span is shorter; When Ea is negative, described actual temperature is higher, and the hot carrier life-span is longer.
Described step 4) is injected hot carrier under stress voltage, measures the resistance of described grating of semiconductor element, predicts the described hot carrier life-span.
Particularly, under stress voltage, inject hot carrier, measure the resistance of described grating of semiconductor element, then according to described resistance-actual temperature curve, obtain corresponding actual temperature, then by obtaining actual temperature, on described actual temperature-Re current-carrying life curve, obtain the life-span of described hot carrier.
As preferably, in the present invention can also described step 3) and step 4) between comprise following steps: according to step 2) in the linear relationship of actual temperature of resistance and device, and the actual temperature of device described in described step 3) and the one-to-one relationship of hot carrier between the life-span, set up described resistance and the one-to-one relationship of hot carrier between the life-span, directly on described resistance and the curve in hot carrier life-span, obtain the hot carrier life-span after measuring resistance.
By web member, connect described device under test grid two ends in the present invention or connect grid both sides and dummy gate is set measures the thermal resistance on grid, and by the thermal resistance recording, obtain the actual temperature of device under test, under actual temperature, predict the life-span of described hot carrier, described method has been considered the influence factors such as stress condition and grid thermal resistance simultaneously, eliminated when hot carrier is injected, caused from heating problems, the prediction in hot carrier life-span is more accurate.
The present invention is illustrated by above-described embodiment, but should be understood that, above-described embodiment is the object for giving an example and illustrating just, but not is intended to the present invention to be limited in described scope of embodiments.In addition it will be appreciated by persons skilled in the art that the present invention is not limited to above-described embodiment, according to instruction of the present invention, can also make more kinds of variants and modifications, these variants and modifications all drop in the present invention's scope required for protection.Protection scope of the present invention is defined by the appended claims and equivalent scope thereof.
Claims (9)
1. the measuring method in semiconductor devices hot carrier life-span, described method comprises:
1) measure the resistance on described device grids, described measuring method is:
1-1) be electrically connected to respectively the two ends of described device grids, measure the resistance of described grid,
Or,
1-2) on described semiconductor devices, grid both sides arrange two dummy gates, and one end of described two dummy gates is connected, and another that is electrically connected to described two dummy gates brought in the resistance of described two dummy gates of test;
2) according to the resistance recording described in step 1), in conjunction with the linear relationship between resistance and temperature, obtain the temperature of described grid, by measuring the temperature of described grid, monitor the actual temperature of described device.
2. method according to claim 1, is characterized in that, described method also comprises step 3):
Calculating is in step 2) described in life-span of hot carrier under actual temperature, set up actual temperature and the one to one relation of hot carrier between the life-span of described device.
3. method according to claim 2, is characterized in that, described method also comprises step 4):
Under stress voltage, inject hot carrier, measure the resistance of described grating of semiconductor element, measure the described hot carrier life-span.
4. method according to claim 2, is characterized in that, described step 3) comprises the following steps:
Under certain stress drain voltage and grid voltage, change the actual temperature of device, utilize substrate/drain current ratio model to obtain the hot carrier life-span under different actual temperatures, set up the actual temperature of described device and the relation one to one in hot carrier life-span.
5. method according to claim 4, it is characterized in that, between described step 3) and step 4), comprise following steps: according to step 2) in the linear relationship of actual temperature of resistance and device, and the actual temperature of device described in described step 3) and the one to one relation of hot carrier between the life-span, set up described resistance and the hot carrier relation one to one between the life-span.
6. method according to claim 1, is characterized in that, described resistance is measured in the power supply, the voltage wiring that by wire, connect on described grid or dummy gate.
7. method according to claim 1, is characterized in that, when described grating of semiconductor element two ends do not contact with the web member of measuring instrument, described semiconductor devices is stock size.
8. method according to claim 1, is characterized in that, while not being connected by the contact hole in device and metal level between described two dummy gates, described semiconductor devices is stock size.
9. method according to claim 1, is characterized in that, described hot carrier drain current and all carrying out on same device from adding thermal measurement.
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| CN104237764A (en) * | 2014-09-15 | 2014-12-24 | 工业和信息化部电子第五研究所 | Method and device for testing MOS device hot carrier injection life degradation |
| CN106571312A (en) * | 2015-10-13 | 2017-04-19 | 中芯国际集成电路制造(上海)有限公司 | Structure and method for measuring contact resistance of FinFET device and electronic device |
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| CN111060794A (en) * | 2019-11-19 | 2020-04-24 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | Method and device for evaluating service life of hot carrier injection effect and computer equipment |
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