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Publication numberCN103513173 A
Publication typeApplication
Application numberCN 201210224114
Publication date15 Jan 2014
Filing date29 Jun 2012
Priority date29 Jun 2012
Also published asCN103513173B
Publication number201210224114.5, CN 103513173 A, CN 103513173A, CN 201210224114, CN-A-103513173, CN103513173 A, CN103513173A, CN201210224114, CN201210224114.5
Inventors林殷茵, 董庆
Applicant复旦大学
Export CitationBiBTeX, EndNote, RefMan
External Links: SIPO, Espacenet
BTI testing device based on voltage-controlled oscillator and testing method thereof
CN 103513173 A
Abstract
The invention provides a bias temperature instability (BTI) testing device based on a voltage-controlled oscillator (VCO) and a testing method of the BTI testing device, and belongs to the technical field of semiconductor device reliability testing. The BTI testing device comprises a device under test (DUT), a ring oscillator (RO), an analog voltage switch module and a first oscillation period test module. The analog voltage switch module is used for controlling the DUT to switch between voltage stress bias and BTI effect test bias. The RO comprises at least one current control phase inverter, and the DUT is used for controlling currents flowing through the current control phase inverter so that the RO and the DUT can form the VCO, wherein the frequency of output signals of the VCO is controlled by the voltage biased at the grid end of the DUT. The first oscillation period test module can synchronously test and output correlated signals in a first period of the output signals of the VCO. The BTI testing device has the advantages of being high in BTI testing sensitivity, accurate in testing, high in testing speed and simple in circuit.
Claims(13)  translated from Chinese
1.一种偏压温度不稳定性测试装置,其特征在于,包括被测器件、环形振荡器、模拟电压切换模块和第一个振荡周期测试模块;其中, 所述模拟电压切换模块用于基于第一控制信号对偏置于所述被测器件的栅端的第一电压或第二电压进行切换控制,所示第一电压为使所述被测器件发生偏压温度不稳定性效应的电压,所述第二电压为使所述被测器件工作于亚阈值的电压; 所述环形振荡器包括至少一个流控反相器,所述被测器件用于控制经该流控反相器的电流,以至于所述环形振荡器与所述被测器件形成其输出信号的频率至少地受偏置于所述被测器件的栅端的电压控制的压控振荡器; 所述第一个振荡周期测试模块同步地受所述第一控制信号控制,以至于所述被测器件的栅端被切换至偏置所述第二电压时,所述压控振荡器的输出信号的第一个周期的相关信号被所述第一个振荡周期测试模块测试输出。 A bias temperature instability test apparatus comprising the device under test, a ring oscillator, the analog voltage and the first switching module oscillation cycle test module; wherein, said analog voltage based on the switching module is used for a first control signal to a first bias voltage to the gate terminal of said device under test or a second voltage switching control, as shown in a first voltage to cause the DUT voltage bias temperature instability effect occurs, said second voltage is the voltage of the device under test operates in subthreshold; said ring oscillator comprises at least one flow control inverter, the device under test through the flow control for controlling the inverter current , so that the ring oscillator with the frequency of the DUT output signal is formed at least to the gate terminal of the voltage controlled by the voltage controlled oscillator bias to said device under test; the first oscillation cycle test When the module by the first synchronization control signal, so that the gate terminal of the device under test is switched to the second bias voltage, said voltage controlled oscillator output signal related to the first cycle of signal is an oscillation period of the first test module test output.
2.如权利要求1所述的偏压温度不稳定性测试装置,其特征在于,所述被测器件为NMOSFET,所述第一电压大于所述NMOSFET的阈值电压,所述第二电压小于所述NM0SFET的阈值电压。 1 2. The bias temperature instability test apparatus according to claim, characterized in that said device under test as NMOSFET, the first voltage is greater than the threshold voltage of the NMOSFET, and the second voltage is less than the NM0SFET above the threshold voltage of.
3.如权利要求1所述的偏压温度不稳定性测试装置,其特征在于,所述被测器件为PM0SFET,所述第一电压为负向电压并且其绝对值大于所述PM0SFET的阈值电压的绝对值,所述第二电压为负向电压并且其小于所述PM0SFET的阈值电压的绝对值。 3. The threshold voltage bias temperature instability of a test device according to claim, characterized in that the device under test is PM0SFET, the first voltage is negative and its absolute value is greater than the voltage of the PM0SFET The absolute value of the second voltage is a negative voltage and its absolute value is less than the threshold voltage of the PM0SFET.
4.如权利要求1所述的偏压温度不稳定性测试装置,其特征在于,所述环形振荡器基本由偶数个第一反相器和奇数个流控反相器串联形成。 The bias temperature instability of a test device according to claim, characterized in that said ring oscillator formed from an even number of substantially a first series of inverters and an odd number of flow control inverters.
5.如权利要求4所述的偏压温度不稳定性测试装置,其特征在于,所述流控反相器为CMOS反相器,所述被测器件与所述CMOS反相器的其中一个MOS管的源端/漏端串联连接。 5. The bias temperature instability of the 4 test apparatus as claimed in claim wherein said flow control inverter is a CMOS inverter, wherein one of said device under test with the CMOS inverter MOS transistor source / drain terminal connected in series.
6.如权利要求`1所述的偏压温度不稳定性测试装置,其特征在于,所述压控振荡器的输出信号的第一个周期的相关信号为第一个周期的周期值。 As claimed in claim 1, wherein `bias temperature instability of the test apparatus, wherein said voltage controlled correlation signal of the first cycle of the oscillator output signal is the period value of the first cycle.
7.如权利要求6所述的偏压温度不稳定性测试装置,其特征在于,所述周期值反映所述第二电压与所述被测器件的阈值电压之差的绝对值的大小。 7. 6 wherein the bias temperature instability testing apparatus as claimed in claim wherein said absolute magnitude period value of the threshold voltage of said second voltage and said reflecting DUT difference.
8.如权利要求7所述的偏压温度不稳定性测试装置,其特征在于,在所述第二电压固定的情况下,所述周期值反映所述被测器件的阈值电压变化,以进一步反映所述第一电压偏置的情况下所发生的偏压温度不稳定性效应的大小。 8. The bias temperature instability of the 7 test apparatus according to claim, characterized in that said second voltage is fixed, the period value reflects a change in the threshold voltage of the device under test, in order to further the size of the bias temperature instability effects reflect the case where the first voltage bias occurred.
9.如权利要求1所述的偏压温度不稳定性测试装置,其特征在于,所述第一信号为脉冲信号。 9. The test apparatus as claimed in bias temperature instability according to claim 1, wherein said first signal is a pulse signal.
10.一种使用如权利要求1所述的装置进行偏压温度不稳定性测试的方法,其特征在于,包括: 校准步骤:在所述被测器件被测试前,将与所述被测器件对应相同的校准单元对应置于所述装置中,在所述校准单元的栅端上偏置多个不同大小的第二电压,并通过所述第一个振荡周期测试模块测试每个第二电压对应的所述第一个周期的周期值,基于所述第二电压与所述周期值建立形成所述第二电压与所述第一个周期的周期值之间的关系曲线; 偏压温度不稳定性产生步骤:对所述被测器件进行测试时,将所述被测器件中置于所述装置中形成所述压控振荡器,控制所述第一信号以使所述第一电压偏置所述被测器件的栅端;偏压温度不稳定性效应测试步骤:控制所述第一信号以使偏置所述被测器件的栅端的第一电压切换为第二电压,同时,所述第一信号使第一个振荡周期测试模块工作并实时地测试输出所述压控振荡器的输出信号的第一个周期的周期值;以及比较计算步骤:将所述第二电压偏置的情况下所得到的所述周期值在所述关系曲线中进行比较计算以反映所述第一电压偏置条件下所述被测器件发生的偏压温度不稳定性效应。 10. An apparatus as in claim 1 using a method according to the test of bias temperature instability, characterized by comprising: a calibration step of: prior to the device under test to be tested, the device under test with the corresponding to the same calibration unit disposed corresponding to said device, the gate terminal of the calibration unit on the second plurality of bias voltages of different sizes, and each of the second test voltage by said test module a first oscillation period period value corresponding to the first cycle, based on the second voltage and the period value established curve forming the said second voltage value to the period between the first cycle; Bias Temperature Stability generating step: when the device under test for testing the device under test is placed in the forming of said voltage controlled oscillator means, said first control signal to cause said first voltage bias a gate terminal of said device under test set; bias temperature instability effect Test procedure: controlling said first signal to cause a first end of the gate bias voltage of the device under test is switched to the second voltage, at the same time, the said first signal so that the first test module and the oscillation cycle of the test in real time the value of the output period of the first cycle of the VCO output signal; and comparing the calculated step of: the second voltage bias The period value obtained in the case of comparing the calculated bias temperature instability effect to a first voltage bias conditions of the device under test to reflect the occurrence in the relation curve.
11.如权利要求10所述的方法,其特征在于,所述被测器件为NMOSFET时,所述第一电压大于所述NMOSFET的阈值电压,所述第二电压小于所述NMOSFET的阈值电压。 11. The method of claim 10, wherein, when the device under test for the NMOSFET, the first voltage is greater than the threshold voltage of the NMOSFET, and the second voltage is less than the threshold voltage of the NMOSFET.
12.如权利要求10所述的方法,其特征在于,所述被测器件为PM0SFET时,所述第一电压为负向电压并且其绝对值大于所述PM0SFET的阈值电压的绝对值,所述第二电压为负向电压并且其小于所述PM0SFET的阈值电压的绝对值。 12. The method according to claim 10, characterized in that the device under test is PM0SFET when said first voltage is a negative voltage and its absolute value is greater than the absolute value of the threshold voltage of the PM0SFET, the The second voltage is a negative voltage and its absolute value is less than the threshold voltage of the PM0SFET.
13.如权利要求10所述的方法,其特征在于,所述比较计算步骤中,基于所述第二电压偏置的情况下所得到的所述周期值,在所述关系曲线中对应计算得出第二电压,将该计算得出的第二电压与在偏压温度不稳定性效应测试步骤中所偏置的第二电压进行差值计算,以反映所述被测器件在偏`压温度不稳定性效应测试步骤中产生的阈值偏移。 13. The method according to claim 10, characterized in that the step period value based on the case where the second bias voltage being obtained on the comparison calculation, the corresponding relation in the calculated curve a second voltage, the second voltage and the calculated second voltage bias temperature instability effect in the test step in the offset difference calculation performed, to reflect the device under test in partial pressure temperature ` Threshold effects of the test step instability generated offset.
Description  translated from Chinese

基于压控振荡器的BTI测试装置及其测试方法 BTI based VCO test device and test methods

技术领域 FIELD

[0001] 本发明属于半导体器件可靠性测试技术领域,涉及偏压温度不稳定性(BiasTemperature Instability, BTI)的测试,具体涉及一种基于压控振荡器(Voltage ControlOscillator, VCO)对被测器件(Device Under Test, DUT)进行BTI测试的装置及其测试方法。 [0001] The present invention belongs to the technical field of semiconductor device reliability test, involving bias temperature instability (BiasTemperature Instability, BTI) of testing, in particular to a VCO (Voltage ControlOscillator, VCO) based on the device under test ( Device Under Test, DUT) perform device and test methods BTI testing.

背景技术 BACKGROUND

[0002] BTI效应(包括负方向偏压温度不稳定性NBTI和正方向偏压温度不稳定性PBTI)是指在一定温度条件下、在MOS管的栅端偏置电压时,MOS管的特性会发生退化,例如,对于PM0SFET,阈值电压(Vth)增加,饱和电流、亚阈值斜率和跨到跨导减小。 [0002] BTI effects (including a negative bias temperature instability NBTI direction and the positive direction of the bias temperature instability PBTI) is under certain temperature conditions, the MOS transistor when the gate bias voltage terminal, the MOS transistor characteristics will degradation occurs, for example, for PM0SFET, the threshold voltage (Vth) increases, the saturation current, subthreshold slope and across the transconductance decreases. 随着器件的尺寸不断缩小,BTI效应成为器件退化的主要因素之一,因此,其越来越受到重视。 With the shrinking size of the device, BTI has become one of the main factors that effect the device degradation, and therefore its more and more attention.

[0003] BTI效应的一个重要特征就是其具有较强的恢复效应,例如,对于PM0SFET,在高温下对其栅端偏置负偏压一段时间后,如果将负偏压该为零偏压或正偏压,器件的退化特性将有很强的恢复。 [0003] An important feature is its BTI effect has a strong recovery effect, e.g., for PM0SFET, at an elevated temperature of its gate terminal biased negative bias period of time, if the zero bias or a negative bias positive bias, deterioration characteristics of the device will have a strong recovery. 因此,这给准确测试MOS管器件的带来难题,通常地,难以实时地测量其阈值电压的变化情况。 Accordingly, MOS tube which gives accurate test device brings problems, generally, it is difficult to measure in real time the changes of the threshold voltage.

[0004] 现有技术的BTI测试装置中,在测试过程中,一般是测量Vth (相同Id条件下)的变化或Id (相同Vgs条件下)的变化,这些均是测量模拟信号来反映BTI,通常具有模拟信号难以跟踪、测量灵敏度不够、电路复杂的缺点,并最终导致测量不准确。 [0004] BTI test devices of the prior art, during testing, is generally measured Vth (Id under the same conditions) of the change or Id (Vgs under the same conditions) of the change, which is a measure of the analog signals are reflected BTI, typically difficult to track an analog signal, the measurement sensitivity is not enough, the circuit complexity of shortcomings, and eventually lead to inaccurate measurements. 其他也有采用数字信号来反映BTI的测试方法,但是,难以实现以上所述的实时测量的要求,并且,测试电路复杂,最终也难以保证测试的准确度。 Other there is also a digital signal to reflect BTI test method, but difficult to achieve real-time measurement requirements described above, and the test circuit is complicated, it is difficult to ensure the ultimate accuracy of the test.

[0005] 有鉴于此,本发明提出一种新型的BTI测试装置。 [0005] In view of this, the present invention proposes a new BTI test apparatus.

发明内容 SUMMARY

[0006] 本发明的目的之一在于,简化BTI测试装置的电路结构。 One object of the [0006] present invention is to simplify the circuit configuration BTI test apparatus.

[0007] 本发明的还一目的在于,提高BTI测试的准确度。 Still another object of the [0007] present invention is to improve the accuracy of BTI test.

[0008] 为实现以上目的或者其他目的,本发明提供一种BTI测试装置,其包括被测器件、环形振荡器、模拟电压切换模块和第一个振荡周期测试模块;其中, [0008] To achieve the above objects or other objects, the present invention provides a BTI test apparatus, which comprises a device under test, a ring oscillator, the analog voltage and the first switching module oscillation cycle test module; wherein,

[0009] 所述模拟电压切换模块用于基于第一控制信号对偏置于所述被测器件的栅端的第一电压或第二电压进行切换控制,所示第一电压为使所述被测器件发生BTI效应的电压,所述第二电压为使所述被测器件工作于亚阈值的电压; [0009] The switching module is an analog voltage based on a first control signal for a first bias voltage to the gate terminal of said device under test or a second voltage switching control, as shown in a first voltage to cause the measured BTI effect device generation voltage, the second voltage is the voltage of the device under test operates in subthreshold;

[0010] 所述环形振荡器包括至少一个流控反相器,所述被测器件用于控制经该流控反相器的电流,以至于所述环形振荡器与所述被测器件形成其输出信号的频率至少地受偏置于所述被测器件的栅端的电压控制的压控振荡器; [0010] The ring oscillator comprises at least one flow control inverter, the device under test through the flow control for controlling the inverter current, so that the ring oscillator formed thereon with the device under test the frequency of the output signal at least to the gate terminal of the voltage controlled oscillator bias voltage controlled by said device under test;

[0011] 所述第一个振荡周期测试模块同步地受所述第一控制信号控制,以至于所述被测器件的栅端被切换至偏置所述第二电压时,所述压控振荡器的输出信号的第一个周期的相关信号被所述第一个振荡周期测试模块测试输出。 When [0011] The first oscillation cycle test module that is in synchronization with said first control signal, so that the gate terminal of the device under test is switched to the second bias voltage, said voltage controlled oscillator The first period of the correlation signal of the output signal is the first oscillation period test modules test output. [0012] 在一实施例中,所述被测器件可以为NM0SFET,所述第一电压大于所述NMOSFET的阈值电压,所述第二电压小于所述NMOSFET的阈值电压。 [0012] In one embodiment, the device under test may be NM0SFET, the first voltage is greater than the threshold voltage of the NMOSFET, and the second voltage is less than the threshold voltage of the NMOSFET.

[0013] 在又一实施例中,所述被测器件可以为PM0SFET,所述第一电压为负向电压并且其绝对值大于所述PM0SFET的阈值电压的绝对值,所述第二电压为负向电压并且其小于所述PM0SFET的阈值电压的绝对值。 [0013] In yet another embodiment, the device under test may be PM0SFET, the first voltage is a negative voltage and its absolute value is greater than the threshold voltage of the PM0SFET absolute value, the second voltage is negative which is smaller than the absolute value of the voltage and the threshold voltage of the PM0SFET.

[0014] 按照本发明一实施例的BTI测试装置,其中,所述环形振荡器基本由偶数个第一反相器和奇数个流控反相器串联形成。 [0014] The test apparatus BTI an embodiment of the invention, wherein the ring oscillator is formed by an even number of substantially a first series of inverters and an odd number of flow control inverters.

[0015] 进一步,所述流控反相器为CMOS反相器,所述被测器件与所述CMOS反相器的其中一个MOS管的源端/漏端串联连接。 [0015] Further, the flow control inverter is a CMOS inverter, a source terminal of the DUT and the CMOS inverter one MOS pipe / drain terminal connected in series.

[0016] 进一步,所述压控振荡器的输出信号的第一个周期的相关信号为第一个周期的周期值。 [0016] Further, the first cycle of the voltage controlled oscillator output signal of the correlation signal for the period value of the first cycle.

[0017] 进一步,所述周期值反映所述第二电压与所述被测器件的阈值电压之差的绝对值的大小。 [0017] Further, the absolute value of the period value to reflect the size of the threshold voltage difference between said second voltage and said device under test.

[0018] 进一步,在所述第二电压固定的情况下,所述周期值反映所述被测器件的阈值电压变化,以进一步反映所述第一电压偏置的情况下所发生的BTI效应的大小。 [0018] Further, in the second voltage is fixed, the period value of the threshold voltage of the device under test changes reflect, BTI effect to further reflect the case where the first bias voltage that occurred in size.

[0019] 在之前所述任一实施例的BTI测试装置中,所述第一信号为脉冲信号。 [0019] In the test apparatus according to any one BTI prior embodiment, the first signal is a pulse signal.

[0020] 按照本发明的又一方面,提供一种使用以上所述的BTI测试装置进行BTI测试的方法,其包括: [0020] in accordance with a further aspect of the present invention, there is provided an apparatus for BTI test performed using the above described method of BTI test, comprising:

[0021] 校准步骤:在所述被测器件被测试前,将与所述被测器件对应相同的校准单元对应置于所述装置中,在所述校准单元的栅端上偏置多个不同大小的第二电压,并通过所述第一个振荡周期测试模块测试每个第二电压对应的所述第一个周期的周期值,基于所述第二电压与所述周期值建立形成所述第二电压与所述第一个周期的周期值之间的关系曲线.[0022] BTI产生步骤:对所述被测器件进行测试时,将所述被测器件中置于所述装置中形成所述压控振荡器,控制所述第一信号以使所述第一电压偏置所述被测器件的栅端; [0021] Calibration steps of: prior to the device under test to be tested, corresponding to the device under test with the same calibration unit disposed corresponding to said device, the gate terminal of the calibration unit on a plurality of different bias magnitude of the second voltage and said second test cycle corresponding to the voltage value of the first cycle through each of the first oscillation period test module, is formed based on the established value of said period of said second voltage The relationship between the curve value of the second voltage to the period between the first period [0022] BTI generating step: when the device under test for testing the device under test is placed in the apparatus is formed said voltage controlled oscillator, said first control signal to cause said first ends of the gate bias voltage of the device under test;

[0023] BTI效应测试步骤:控制所述第一信号以使偏置所述被测器件的栅端的第一电压切换为第二电压,同时,所述第一信号使第一个振荡周期测试模块工作并实时地测试输出所述压控振荡器的输出信号的第一个周期的周期值;以及 [0023] BTI effect Test procedure: said first control signal to the bias voltage of the gate terminal of the first device under test is switched to a second voltage, while the first cycle of the oscillation signal so that the first test module and real-time work output of the voltage controlled test period value of the first cycle of the oscillator output signal; and

[0024] 比较计算步骤:将所述第二电压偏置的情况下所得到的所述周期值在所述关系曲线中进行比较计算以反映所述第一电压偏置条件下所述被测器件发生的BTI效应。 [0024] Comparative calculation step: the case where the period value of the second voltage bias was subjected to the voltage at said first device under test comparing the calculated bias conditions to reflect the relation curve BTI effect occurred.

[0025] 在一实施例中,所述被测器件为NMOSFET时,所述第一电压大于所述NMOSFET的阈值电压,所述第二电压小于所述NMOSFET的阈值电压。 When [0025] In one embodiment, the device under test as NMOSFET, the first voltage is greater than the threshold voltage of the NMOSFET, and the second voltage is less than the threshold voltage of the NMOSFET.

[0026] 在又一实施例中,所述被测器件为PM0SFET时,所述第一电压为负向电压并且其绝对值大于所述PM0SFET的阈值电压的绝对值,所述第二电压为负向电压并且其小于所述PM0SFET的阈值电压的绝对值。 [0026] In yet another embodiment, the device under test when PM0SFET, the first voltage is a negative voltage and its absolute value is greater than the absolute value of the threshold voltage of the PM0SFET, said second voltage is negative which is smaller than the absolute value of the voltage and the threshold voltage of the PM0SFET.

[0027] 进一步,所述比较计算步骤中,基于所述第二电压偏置的情况下所得到的所述周期值,在所述关系曲线中对应计算得出第二电压,将该计算得出的第二电压与在BTI效应测试步骤中所偏置的第二电压进行差值计算,以反映所述被测器件在偏压温度不稳定性效应测试步骤中产生的阈值偏移。 [0027] Further, the comparison calculation step, based on the case where the period value of the second bias voltage being obtained, corresponding to a second voltage in the calculated relationship curve, the calculated The second voltage and the second voltage at the test step in the BTI effect was offset difference calculating, the threshold value to reflect the device under test resulting in bias temperature instability effect test step offset. [0028] 本发明的技术效果是,第一,由于其输出的第一个振荡周期的相关信号是数字信号测量,其测试准确;第二,第一个振荡周期的周期值T是基于VCO的流控MOS管(也即被测器件)工作于亚阈值区测试得出,因此,其可以放大地反映出其Vth受BTI效应的变化,测试灵敏度高。 [0028] Technical effects of the present invention, the first, due to the oscillation period of the first correlation signal whose output is a digital signal measurement, the test is accurate; second, the cycle of the first oscillation period T is based on the value of the VCO MOS pipe flow control (ie DUT) operates in the subthreshold region test results, therefore, it can be enlarged to reflect its effect by BTI Vth variation, high test sensitivity. 第三,通过对VCO输出的第一振荡周期的周期值T测量,可以在第一电压去除后实时同步测试完成,测试速度快,其测试结果受BTI效应的恢复效应影响小,更进一步地实现了准确测量;第四,整个测试装置未引入模拟电路,整体电路简单。 Third, through the first oscillation period of the cycle of the VCO output value T measurements, real-time synchronization test after the first voltage removal is complete, test speed, the test results were affected by a small recovery Effect BTI effects, further realization the accurate measurement; fourth, the entire test device is not introduced into the analog circuit, the overall circuit is simple.

附图说明 Brief Description

[0029] 从结合附图的以下详细说明中,将会使本发明的上述和其他目的及优点更加完全清楚,其中,相同或相似的要素采用相同的标号表示。 [0029] from the following detailed description in conjunction with the drawings, will make the above and other objects and advantages of the present invention will be more fully understood, in which the same or similar elements use the same reference numerals.

[0030] 图1是按照本发明一实施例提供的BTI测试装置的电路模块结构示意图。 [0030] Figure 1 is a schematic view of a circuit module structure according to the embodiment BTI test apparatus provided in an embodiment of the present invention.

[0031] 图2是图1所示实施例的BTI测试装置所测试出的VCO的第一个振荡周期的周期值T与v_s之间的关系曲线。 [0031] FIG. 2 is a first oscillation period of the test apparatus of an embodiment of the BTI tested out of the cycle of the VCO shown in FIG. 1 relation between the curve T and v_s.

[0032] 图3是按照本发明又一实施例提供的BTI测试装置的电路模块结构示意图。 [0032] FIG. 3 is a schematic structural view of a circuit module BTI test apparatus according to the present invention is provided in accordance with yet another embodiment.

[0033] 图4是基于图3所不实施例的BTI测试装直的测试时序关系不意图。 [0033] FIG. 4 is a timing relationship based test BTI test device Figure 3 is not a straight embodiment is not intended.

具体实施方式 DETAILED DESCRIPTION

[0034] 下面介绍的是本发明的多个可能实施例中的一些,旨在提供对本发明的基本了解,并不旨在确认本发明的关键或决定性的要素或限定所要保护的范围。 [0034] Here is a plurality of possible embodiments of the present invention, in some of them, designed to provide a basic understanding of the present invention and are not intended to confirm the scope of the present invention key or critical elements or limited to be protected. 容易理解,根据本发明的技术方案,在不变更本发明的实质精神下,本领域的一般技术人员可以提出可相互替换的其他实现方式。 Readily appreciated, According to the present invention, without changing the true spirit of the present invention, the ordinary skill in the art can make other implementations may be interchangeable. 因此,以下具体实施方式以及附图仅是对本发明的技术方案的示例性说明,而不应当视为本发明的全部或者视为对本发明技术方案的限定或限制。 Therefore, the following detailed description and drawings are only for the aspect of the present invention is illustrative, and should not be regarded as all or is deemed to define or limit the invention to the aspect of the present invention.

[0035] 图1所示为按照本发明一实施例提供的BTI测试装置的电路模块结构示意图。 [0035] Figure 1 is a schematic view of a circuit module structure according to BTI test apparatus according to an embodiment of the present invention is provided. 在该实施例中,BTI测试装置100用于对被测器件(DUT) 120进行测试,DUT120在该示例中为NM0SFET,但是,DUT120并不限于本示例,其可以选择为其他类似MOS管结构的器件,例如,PM0SFET 等。 In this embodiment, BTI test apparatus 100 for a device under test (DUT) 120 for testing, DUT120 in this example is NM0SFET, however, DUT120 not limited to this example, it can be selected for other similar MOS transistor structure devices, e.g., PM0SFET like.

[0036] 继续如图1所示,BTI测试装置100主要地包括基于多级反相器串联形成的环形振荡器(Ring Oscillator) 110,在本发明中,环形振荡器110与DUT120共同形成VC0。 [0036] Continue 1, BTI test apparatus 100 mainly includes a ring oscillator based on (Ring Oscillator) in series to form a multi-stage inverters 110, in the present invention, the ring oscillator 110 is formed together with DUT120 VC0. 该VCO可以基于环形振荡器110的传输延时调节振荡器频率。 The VCO can adjust the oscillator frequency transmission delay of the ring oscillator 110 is based. 环形振荡器110在该实施例中通过奇数个(大于或等于3个)反相器串联连接形成环路来实现。 Ring oscillator 110 in this embodiment by an odd number (greater than or equal to 3) inverters connected in series to form a loop to achieve. 具体地,包括偶数个反相器112和奇数个流控反相器111,如图1中所示,环形振荡器110包括4个反相器112和I个流控反相器111,每个反相器的输出端连接至另一个反相器的输入端,依次首尾串联连接形成环路。 Specifically, including an even number and an odd number of inverters 112 flow control inverter 111, as shown in Fig 1 comprises a ring oscillator 110 four inverters 112 and a flow control I inverters 111, each output of the inverter is connected to the other input terminal of the inverter, are sequentially connected end to end in series to form a loop. 其中,流控反相器111具体可以选择为如图所示的CMOS反相器。 Wherein the specific flow control inverter 111 can be selected as shown in FIG CMOS inverter. 流经流控反相器111的电流大小是受DUT120控制,因此,DUT120也用作的流控反相器111的流控MOS管。 Inverter current flowing through the flow control is affected by the size of the 111 DUT120 control, therefore, DUT120 also used as flow control flow control MOS transistor inverter 111.

[0037] 流控反相器111中的其中一个MOS管(Ml)的漏端或源端串联连接于DUT120的源端或漏端,流控反相器111中的另一个MOS管(M2)的源端或漏端输入电压VDD(例如1.2V),因此,DUT120的栅端偏置电压可以控制流经DUT120的电流,也即可以控制流经流控反相器111的电流。 [0037] Flow control of the inverter 111 in one of the MOS transistor (Ml) of the drain or source connected in series with the source terminal or the drain terminal DUT120, the flow control of the inverter 111 in the other MOS transistor (M2) The source or drain input voltage VDD (e.g., 1.2V), and therefore, DUT120 gate bias voltage to control terminals of the current flowing through DUT120, i.e. to control the current flowing through the flow control of the inverter 111. 控制栅端偏置电压以使DUT120工作于亚阈值区时,流经流控反相器111的电流是受DUT120的栅端偏置电压所控制,并且对其变化反应灵敏。 When the bias voltage to the control gate terminal so DUT120 operate in sub-threshold region, the current flowing through the flow control of the inverter 111 is subject DUT120 gate bias voltage control terminal, and responsive to its change. [0038] 在又一实施例中,4个反相器112也可以为CMOS反相器,但是其并不受DUT120控制。 [0038] In yet another embodiment, four inverters 112 may be a CMOS inverter, but it is not controlled by DUT120. 另外,流控反相器111与DUT120之间的位置关系并不受图示实施例限制,例如,在其他实施例中,DUT120为PM0SFET时,其也可以置于流控反相器111上方并与M2的源端或漏端串连。 Further, the positional relationship between the 111 and DUT120 inverter is not subject to flow control restrictions embodiment illustrated embodiment, for example, in other embodiments, DUT120 when PM0SFET, which may also be placed above the flow control of the inverter 111 and and the source or drain of M2 series.

[0039] 该VCO的输出信号的输出频率f是取决于串联的反相器的总传输延时。 [0039] The output signal of the VCO output frequency f is dependent on the total series inverter propagation delay. 而当DUT120的压控端(也即栅端)输入的电压小于其阈值电压(Vth)时,其流过的电流为亚阈值电流。 When DUT120 voltage control terminal (i.e. the gate terminal) of the input voltage is less than its threshold voltage (Vth), the current flowing to its sub-threshold current. 由于亚阈值电流通常比较小,对于DUT120所连接的流控反相器111,其传输延时远远大于其他反相器112的传输延,此时,输出频率f基本取决于流控反相器111的传输延时,从而输出频率f (即输出信号的频率)主要取决于流经DUT120的亚阈值电流,进而通过f可以基本反映DUT120的亚阈值电流信息,进而可以通过f反映了DUT120上所偏置的栅端电压信息,也即输出频率f的周期信息可以反映DUT120上所偏置的栅端电压信息。 Since the subthreshold current is usually small, for flow control of the inverter 111 is connected DUT120, which is far greater than the transmission delay transmission delay other inverter 112, in which case, depending on the output frequency f of basic flow control inverter transmission delay 111, so that the output frequency f (i.e., output signal frequency) depends on the flow through DUT120 subthreshold currents, which may be substantially reflect DUT120 subthreshold current information f, and then f can be reflected by the upper DUT120 The gate bias voltage information terminal, i.e. the output frequency f of the cycle information can be reflected on DUT120 the gate bias terminal voltage information.

[0040] 继续如图1所示,BTI测试装置100还包括模拟电压切换模块130和第一个振荡周期测试模块140。 [0040] Continue 1, BTI test apparatus 100 further comprises an analog voltage switching module 130 and a test module 140 oscillation period. 其中模拟电压切换模块130其用于控制偏置于DUT120的栅端的电压信号,具体地,为测试DUT的BTI效应,偏置于DUT120的栅端的电压信号至少需要使用Vmeas132和Vst,ess131,其中,Vstaess131为在BTI测试过程中向DUT的栅端偏置的电压应力(例如,在某一温度条件下),在本文中简称为“第一电压”,在该实例中,其选择大于DUT的阈值电压(例如1.2V或以上);Vffleas132为使DUT工作于亚阈值区的电压,在本文中简称为“第二电压”,在该实施例中,其选择小于DUT的阈值电压。 Wherein an analog voltage for controlling the switching module 130 is biased at DUT120 gate terminal of the voltage signal, in particular, for testing the DUT BTI effect, biased DUT120 gate terminal of the voltage signal requires at least Vmeas132 and Vst, ess131, wherein, Vstaess131 BTI testing process for the gate terminal biased to the DUT voltage stress (e.g., at a temperature condition), referred to herein as the "first voltage" in this example, the choice of the threshold value is greater than the DUT voltage (e.g., 1.2V or more); Vffleas132 DUT operating voltage in order to make the sub-threshold region, referred to herein as a "second voltage" in this embodiment, the choice of the threshold voltage is less than the DUT. V_s132和VstMss131均为模拟电压,切换模块130具体可以通过信号(Sel) 190控制,例如,信号190可以为电压脉冲信号,当其为低电平时,模拟电压切换模块130选择Vst,ess131并将其偏置在DUT120的栅端上;当信号190为高电平时,模拟电压切换模块130选择Vmeas132并将其偏置在DUT120的栅端上,从而方便地实现切换控制。 V_s132 and VstMss131 are analog voltage, switching module 130 can signal a specific (Sel) 190 controls, e.g., signal 190 may be a voltage pulse signal, when it is low, the switching module 130 selects an analog voltage Vst, ess131 and biased in DUT120 gate terminal; when signal 190 is high, the analog voltage switching module 130 selects Vmeas132 and biased in DUT120 gate terminal, thus facilitating to achieve the switching control.

[0041] 同时,信号190还偏置于第一个振荡周期测试模块140上,例如,信号190偏置于高电平时(此时Vmeas132偏置于DUT120,使其工作于亚阈值区),第一个振荡周期测试模块140同步地开始工作测量VCO输出的第一个振荡周期(也即输出信号的第一个周期)的相关信息并输出141,例如,输出141为第一个振荡周期的周期值T。 [0041] Meanwhile, the first signal 190 is also biased in an oscillating cycle test module 140, e.g., signal 190 biased at the high level (at this time Vmeas132 biased DUT120, it operates in the sub-threshold region), the first A test module 140 starts oscillation period in synchronism with the work output of the first measuring VCO oscillation period (i.e., output of the first periodic signal) and outputs the correlation information 141, e.g., the output 141 of the first oscillation period of cycle value T.

[0042] 基于图1所示的DUT测试装置在对DUT120进行BTI测试时,首先,步骤S910,在DUT120被在被偏置V一131之前,选择与DUT120结构参数相同的校准单元作为流控MOS管。 Before [0042] Based on DUT test apparatus shown in Figure 1 when carried on DUT120 BTI test, First, in step S910, in DUT120 being biased in a 131 V, the same selection and DUT120 structure parameter calibration unit as a flow control MOS tube. 如上所述输出信号的周期值T可以反映DUT120上所偏置的栅端电压信息,因此,同样可以在校准单元上偏置不同大小的V_s132,相应地测量出VCO的多个第一个振荡周期的周期值T,从而可以得到T与Vnwas之间的关系曲线。 Cycle described above, the output signal value T may reflect on DUT120 gate terminal voltage is offset information, therefore, also be of different sizes V_s132 bias on the calibration unit, to measure a plurality of corresponding first VCO oscillation period period value T, the relationship can be obtained between the curve T and Vnwas. 其中,校准单元为未受BTI影响的NM0SFET,其阈值电压与DUT120相同。 Wherein the calibration unit is unaffected BTI affected NM0SFET, its threshold voltage DUT120 same.

[0043] 图2所示为图1所示实施例的BTI测试装置所测试出的VCO的第一个振荡周期的周期值T与V_s之间的关系曲线。 [0043] Figure 1 shows a first oscillation period of cycle test apparatus of an embodiment of the BTI tested out the value of the VCO curve between T and V_s FIG. 在该实施例中,在不同V_s132的情况下,信号190输入高电平,使模拟电压切换模块130选择V_s132,此时,校准单元工作于亚阈值区,流经校准单元和流控反相器111的电流11受_3132控制,I Vth-Vnreas I越大(由于之前没有偏置Vstress131, Vth基本没有发生变化,即此时基本不存在BTI效应),电流I1越小;此时,流控反相器111延迟远远大于反相器112的延迟,因此,环形振荡器110与校准单元构成的VCO的输出频率f由流控反相器111的延迟决定,也即第一个振荡周期的周期值T由V_s (此时Vth基本不变)决定。 In this embodiment, in the case of different V_s132, the input signal 190 high, so that the analog voltage switching module 130 selects V_s132, In this case, the calibration unit is operated in sub-threshold region, flowing through the calibration unit and flow control inverter 111 current 11 controlled by the _3132, I Vth-Vnreas I the greater (due to no bias before Vstress131, Vth does not vary substantially, i.e., at this time substantially no effect BTI), the smaller the current I1; In this case, flow control inverter 111 is much larger than the delay of the delay inverter 112, therefore, the ring oscillator 110 and the calibration units of the VCO output frequency f by a delay decision flow control inverter 111, i.e., the first oscillation period period is determined by the value of T V_s (Vth basically unchanged at this time). 因此,在v_s变化的情况下,根据相应到测量的多个第一个振荡周期的周期值T,可以得到如图2所示的周期值T与V_s的函数关系曲线。 Thus, in the case of v_s change, according to the plurality of measurement cycles corresponding to the first oscillation period value T, the cycle can be obtained as shown in Figure 2 as a function of the value of the curve T and V_s.

[0044] 进一步,步骤S920,准备测试BTI效应,通过信号190输入低电平(电压脉冲信号为低电平),使模拟电压切换模块130选择Vst,ess131,此时,DUT120处于应力偏置条件下。 [0044] Further, the step S920, ready to test BTI effect, by the low level input signal 190 (voltage pulse signal is low), the analog voltage switching module 130 select Vst, ess131, at this time, DUT120 in stress bias conditions next. Vstress131的偏置时间由信号190的电压脉冲信号的低电平时间长短决定,其可以根据具体测试要求而进行具体选择设置。 Vstress131 bias is determined by the length of time signal low voltage pulse signal 190, which may be carried out according to the specific requirements of the specific choice of the test set.

[0045] 进一步,步骤S930,通过信号190输入高电平,使模拟电压切换模块130选择Vmeas132,此时,DUT120工作于亚阈值区,流经DUT120和流控反相器111的电流I1受Vmeas132控制,I Vth-Vnreas I越大,电流I1越小;此时,流控反相器111延迟远远大于反相器112的延迟,因此,环形振荡器110与DUT120构成的VCO的输出频率f由流控反相器111的延迟决定,也即由I vth-v_s I决定。 [0045] Further, in step S930, by the high level input signal 190, the analog voltage switching module 130 selects Vmeas132, at this time, the current I1 DUT120 operating in sub-threshold region, and flow control flows DUT120 inverter 111 by Vmeas132 control, I Vth-Vnreas I larger the smaller the current I1; In this case, flow control of the inverter 111 is much greater than the delay of the delay inverter 112, therefore, the ring oscillator 110 and DUT120 constituted VCO output frequency f , that is determined by the delay in the decision flow control inverter 111 from I vth-v_s I.

[0046] 同时,在VCO起振后,信号190输入高电平控制第一个振荡周期测试模块140开始工作,其基本可以在应力偏置去除的条件下很快地测试出该V_s对应的第一个振荡周期的周期值T,例如可以在IOOns内测量振荡的第一个周期的结果。 [0046] Meanwhile, after the VCO oscillating, the signal input level control 190 first test module 140 oscillation cycle to work, the basic can quickly test out the bias removal under stress conditions that correspond to the first V_s A periodic oscillation period value T, for example, the measurement results of the first cycle of oscillation within IOOns. 因此,DUT120的BTI的恢复效应在此基本可以得到克服,并且测试速度快。 Therefore, restoring effect of DUT120 BTI in this basic can be overcome, and the test speed.

[0047] 进一步,步骤S940,根据第一个振荡周期的周期值T,基于图2所示的关系曲线,可以对应地得出Vmeas,该Vmeas与实际偏置的Vmeas (步骤S930中的Vmeas)之间的差值,是由VstressI31对DUT产生的BTI效应所导致的,也即反映了Vstoss131偏置后的DUT120的阈值电压Vth的偏移量。 [0047] Further, in step S940, the value according to the period of one oscillation cycle T, the curve shown in Figure 2 based, may correspond to draw Vmeas, the Vmeas actual offset Vmeas (step S930 in Vmeas) the difference between the BTI effect produced by the DUT VstressI31 caused, i.e. reflects Vstoss131 after DUT120 bias threshold voltage Vth is offset.

[0048] 综合上可知,BTI效应可以由图1所示实施例的测试装置100准备快速的测试得出。 [0048] Integrated the foregoing, BTI effect test apparatus 100 can be prepared by the rapid test results shown in Fig. 1 embodiment. 由于其输出的第一个振荡周期的相关信号是数字信号测量,其测试准确;并且,第一个振荡周期的周期值T是基于VCO的流控MOS管(也即DUT120)工作于亚阈值区测试得出,因此,其可以放大地反映出其Vth的受BTI效应的变化,测试灵敏度高。 Since the first oscillation period of the correlation signal which is a digital output signal measurements, the test accuracy; and, a periodic oscillation period T is based on the value of the flow control MOS transistor VCO (i.e. DUT120) operating in sub-threshold region test results, therefore, it can reflect changes in their amplification by BTI Vth effect, high sensitivity of the test. 进一步,通过对VCO输出的第一振荡周期的周期值T测量,可以在&&_131去除后实时同步测试完成(例如可以达到IOOns以内),测试速度快,其测试结果受BTI效应的恢复效应影响小,更进一步地实现了准确测量。 Further, through the period of the VCO output of the first oscillation cycle value T measurements, real-time synchronization test is completed after && _ 131 removed (for example, up to IOOns less), test speed, the test results were affected by a small recovery Effect BTI effects, further to achieve an accurate measurement. 同时,整个测试装置未引入模拟电路,整体电路简单。 Meanwhile, the entire test device is not introduced into the analog circuit, the overall circuit is simple.

[0049] 需要说明的是,更换DUT120时,如果更换后的DUT与更换之前的DUT为相同的器件,例如,在同一晶圆上制备的器件,或者在同一工艺流水线上制备的器件,则可以继续采用图2所示的关系曲线,重复步骤S920至步骤S940即可是实现对于更换后的DUT的BTI测试。 [0049] It should be noted that, when replacing DUT120, if the replacement of the previous DUT DUT and replacement for the same device, for example, devices on the same wafer preparation, or devices on the same assembly line process preparation, you can continue to use the curve shown in Figure 2, repeating step S920 to step S940 can be realized for the replacement of the BTI DUT testing. 当然,也可以在改变Vstass大小后,重复步骤S920至步骤S940进行不同Vstoss条件下对应于DUT的BTI效应测试。 It is also possible, after changing Vstass size, repeat step S920 through step S940 carried out under different conditions corresponding to the DUT Vstoss BTI effect test. 进一步,如果更换后的DUT与更换之前的DUT为不同器件,需要重新选取与更换后的DUT对应相同的校准单元,执行步骤S910,测试出其周期值T与Vmeas的函数关系曲线。 Further, if the replacement of the previous DUT DUT and replacement of different devices, you need to re-select the DUT corresponding replacement of the same calibration unit, step S910, test out their period value as a function of T and Vmeas curve.

[0050] 图3所示为按照本发明又一实施例提供的BTI测试装置的电路模块结构示意图。 [0050] Schematic diagram of the circuit module shown in FIG. 3 BTI test apparatus according to the present invention is provided in a further embodiment. 该实施例的BTI测试装置300与图1所示实施例的BTI测试装置100测试原理基本相同。 BTI test apparatus 300 of the embodiment of FIG principle BTI test apparatus 100 tests the embodiment shown in Figure 1 is substantially the same. 在该实施例中,可以对DUT阵列进行测试,如图3所示,DUT阵列320包括多个DUT单元,每个单元可以被选择与环形振荡器310形成VC0。 In this embodiment, it is possible to test the DUT array, shown in Figure 3, DUT DUT array 320 comprises a plurality of units, each unit may be selected with the ring oscillator 310 is formed VC0. 同样地,环形振荡器310与图1所示的环形振荡器110基本类似,其至少包括一个流控反相器,其可以与被选择的DUT单元串联,从而,形成的VCO的输出信号的频率可以基本地由偏置在DUT单元的栅端的信号来控制。 Frequency Likewise, the ring oscillator 110 is substantially similar to the ring oscillator 310 as shown in Fig, comprising at least one flow control inverter, which may be connected in series with the DUT selected unit, thereby, the formation of the VCO output signal may be substantially at the gate terminal of the DUT signal is controlled by the bias unit. 具体地,BTI测试装置300可以通过如图所示的地址解码器和堆栈转换器来根据地址信号对应选择测DUT单元,因此,该实施例的BTI测试装置300可以方便的进行阵列测试。 Specifically, BTI test apparatus 300 via the address decoder and transducer stack as shown to correspond to the address selecting unit DUT measurement signal, therefore, BTI test apparatus 300 of this embodiment can easily be array test. 当然,DUT阵列320中也可以包括校准单元,在执行以上所述的步骤S910时,可以选择某一相应校准单元进行测试。 Of course, DUT array 320 also may include a calibration unit, in executing the above-described step S910, the calibration unit can select an appropriate test.

[0051] 继续如图3所示,BTI测试装置300的模拟电压切换模块330同样可以至少地实现如图1所示的模拟电压切换模块130的功能。 [0051] Continue As shown, the analog voltage BTI test apparatus 300 of the switching three module 330 may be implemented at least similarly to the analog voltage as shown in Fig. 1 a switching module 130 functions. V_s132和Vstass131之间的切换同样可以受信号190控制,当然,该实施例中,信号Str/Rec还可以控制和Vtjff之间的切换,其中,Voff偏置时,使其他未被选中的DUT单元全部关断,Vrecover偏置时,针对被选中的DUT单元,测量其Vth恢复的过程。 Switching between V_s132 and Vstass131 also be controlled by the signal 190, of course, in this embodiment, the signal Str / Rec Vtjff can also control and switching between, wherein, when the Voff bias, so that other unselected DUT unit are all turned off, when Vrecover bias for selected DUT unit, measurement process which Vth recovery.

[0052] 信号190同时偏置于第一个振荡周期测试模块340的控制逻辑子模块341上。 [0052] while the bias signal 190 on the first oscillation cycle test module control logic sub-module 341 340. 第一个振荡周期测试模块340的功能与如图1所示的第一个振荡周期测试模块140的功能基本相同。 The first oscillation cycle test module 340 functions as shown in the first oscillation period of a test module 140 shown in basically the same function. 如图3所示,基本由环形振荡器310和DUT阵列320形成的VCO的输出信号经过电平移位模块350进行处理后,分别输出控制逻辑子模块341和频分器360。 Shown, VCO output signal substantially by the ring oscillator 310 and the DUT array 320 is formed after the level shifter module 350 for processing, the output control logic sub-module 341 and frequency divider 360 are shown in Figure 3. 具体地,在该实施例中,341是控制逻辑单元,主要是状态机,根据Sel信号和VCOout信号的变化,产生状态的变化,采样VCOout的第一个周期并控制计数器单元342的使能和清零;342是同步计数器单元,具有清零和使能端,根据清零和使能信号进行清零或计数;343是寄存器单元,将同步计数器单元342的数值进行保存,直到控制逻辑单元340产生清零为止。 Specifically, in this embodiment, the control logic unit 341 is, mainly the state machine, according to the change signal and VCOout Sel signal, generating a state change, the first cycle of sampling VCOout unit 342 and controls the counter enable and cleared; 342 is synchronous counter unit, with Clear and enable end, cleared or count based on clearing and enable signal; 343 is a register unit, the value of the synchronization counter unit 342 is saved until the control logic unit 340 generate cleared up. 频分器360进一步输出该VCO所对应的输出频率f_out。 Frequency divider 360 further outputs the corresponding VCO output frequency f_out.

[0053] 图4所不为基于图3所不实施例的BTI测试装置的测试时序关系不意图。 [0053] FIG. 4 is not based on the test sequence diagram 3 BTI test device is not an embodiment is not intended. 基于图4所示实施例的信号,反映了该BTI测试装置的测试原理。 Based on Figure 4 the signal of the illustrated embodiment, reflecting the principle of the test BTI test apparatus. 其中,Sel信号是测试使能信号,当偏置应力或恢复一段时间之后启动Sel进行DUT单元的Vth的测量。 Wherein, Sel signal is a test enable signal, when the bias stress or recovery after a period of time to start the measurement Sel Vth of DUT unit. VCOrat是Vth测试过程中该VCO的振荡信号输出,在Sel为高电平的整个过程中都会振荡。 VCOrat Vth testing process is an oscillation signal of the VCO's output, Sel is high in the whole process will oscillate. C0unter_en是控制逻辑采样VCO的第一个周期,产生与VCO第一个周期相同的脉冲,控制计数器计数,这样就实现了将VCO的第一个周期转为数字数据。 C0unter_en VCO control logic sampling of the first cycle, resulting in the first cycle of the same pulse VCO, control counter, thus achieving the first cycle of the VCO into digital data. CLK是时钟信号,一直有效。 CLK is the clock signal, has been effective. Data_out是计数器输出,在Counter_en有效的器件计数并输出结果,一旦Counter_en无效,则保持结果,并一直保持到下一次Sel为高电平,Sel —旦为高电平会由控制逻辑模块单元341对其清零。 Data_out is counter output, Counter_en effective device count and output the results, once Counter_en invalid, then keep the results and remains high until the next Sel, Sel - once as high by the control logic module unit will be 341 pairs cleared.

[0054] 以上例子主要说明了本发明的BTI测试装置及其测试方法。 [0054] The above example mainly described BTI test apparatus and test method of the invention. 尽管只对其中一些本发明的实施方式进行了描述,但是本领域普通技术人员应当了解,本发明可以在不偏离其主旨与范围内以许多其他的形式实施。 While only some of the embodiments of the present invention have been described, those of ordinary skill should understand that the present invention can be made without departing from its spirit and scope embodiments in many other forms. 因此,所展示的例子与实施方式被视为示意性的而非限制性的,在不脱离如所附各权利要求所定义的本发明精神及范围的情况下,本发明可能涵盖各种的修改与替换。 Therefore, the examples shown with the embodiment is considered illustrative and not limiting, without departing from the spirit and scope of the invention as defined by the appended claims all of, the present invention may cover various modifications and replacement.

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International ClassificationG01R31/26
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